IFS75S12N3T4_B11 Infineon Technologies, IFS75S12N3T4_B11 Datasheet - Page 10

• Manufacturer Part Number: IFS75S12N3T4_B11
• Manufacturer: Infineon Technologies

Specifications of IFS75S12N3T4_B11

• Packages: AG-MIPAQ-2
• Ic (max): 75.0 A
• Vce(sat) (typ): 1.85 V
• Configuration: sixpack
• Technology: IGBT4
• Housing: EconoPACK™ 3

IGBT-Module
IGBT-Modules
prepared by: US
approved by: MH
Technische Information / technical information
8
6
4
2
0
150
150
135
135
120
120
105
105
Durchlasskennlinie der Diode-Wechselr. (typisch)
Durchlasskennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode inverter (typical)
forward characteristic of diode inverter (typical)
I
I
90
90
75
60
45
30
15
F
F
0
0
= f(V
= f(V
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,4
2
F
F
)
)
4
Tvj = 25°C
Tvj = 25°C
Tvj = 125°C
Tvj = 125°C
Tvj = 150° C
Tvj = 150° C
Tvj = 25° C
Tvj = 125° C
Tvj = 150° C
6
8
R
V
G
10
F
[ ]
[V]
12
date of publication: 16.08.2011
revision: 2.1
IFS75S12N3T4_B11
14
16
18
20
10(13)
200
200
150
150
100
100
50
50
0
0
12
12
8
8
4
0
0
0
0
200
200
15
30
Tvj = 25° C
Tvj = 25° C
Tvj = 125° C
Tvj = 125° C
Tvj = 150° C
Tvj = 150° C
Ic, Modul
Ic, Modul
IC, Chip
IC, Chip
400
400
45
600
600
60
V
V
CE
CE
Zieldaten
Target Data
I
F
75
[V]
[V]
[A]
800
800
90 105 120 135 150
1000
1000
1200
1200
DB_IFS75S12N3T4_B11_2V1_2011-08-16
1400
1400