IFS200V12PT4 Infineon Technologies, IFS200V12PT4 Datasheet - Page 5

• Manufacturer Part Number: IFS200V12PT4
• Manufacturer: Infineon Technologies

Specifications of IFS200V12PT4

• Packages: AG-MIPAQ-3
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: sixpack
• Technology: IGBT4
• Housing: EconoPACK™ 4

MIPAQ™serve
prepared by: Marco Bohlländer
approved by: Martin Schulz
Switching losses IGBT
E
U
Output characteristic IGBT
I
C
Forward characteristic diode
I
F
on
GSPx
= f(U
70
60
50
40
30
20
10
= f(U
400
360
320
280
240
200
160
120
400
360
320
280
240
200
160
120
0
= f(I
80
40
80
40
0
0
0
= 16V, U
0
C
CE
0
F
), E
)
) @ U
- - -
_____
0,2 0,4 0,6 0,8
- - -
_____
50
off
- - -
_____
0,5
= f(I
GSNx
GSPx
T
E
T
E
v j
T
of f
100
v j
T
on
C
v j
= 150°C
= -8V, T
v j
)
= 25°C
= 150°C
= 16V
= 25°C
1
150
vj
IFS200V12PT4
U
1
= 150°C
CE
IC [A]
1,5
U
200
1,2 1,4 1,6 1,8
F
[V]
[V]
250
2
300
date of publication: 08.06.2010
revision: 2.0
2,5
2
350
2,2 2,4
3
400
1000
900
800
700
600
500
400
300
200
100
Switching losses diode
E
Digital temperature output
Number of pulses within 100ms
rec
0
Output characteristic IGBT
I
C
30
27
24
21
18
15
12
-40 -30 -20 -1 0
9
6
3
0
= f(U
= f(I
400
360
320
280
240
200
160
120
0
80
40
0
F
0
) @ U
CE
____
50
) @ T
……..
- - -
_____
0,5
CE
E
rec
= 600V, T
0
vj
100
U
1
U
U
GSPx
= 150°C
GSPx
GSPx
1 0
1,5
= 16V
20
150
= 18V
= 14V
vj
30
2
T
= 150°C
NTC
I
U
F
40
200
CE
[A]
2,5
[°C]
[V]
50
preliminary data
3
250
60
3,5
70
300
80
4
90
4,5
350
1 00 1 1 0 1 20
5
400