BTS 50070-1EGA Infineon Technologies, BTS 50070-1EGA Datasheet - Page 10

• Manufacturer Part Number: BTS 50070-1EGA
• Manufacturer: Infineon Technologies

Specifications of BTS 50070-1EGA

• Packages: PG-DSO-12
• Channels: 1.0
• Ron @ Tj = 25°c: 7.0 mOhm
• Recommended Operating Voltage Min.: 6.0 V
• Recommended Operating Voltage Max.: 28.0 V
• Il(sc): 90.0 A

5
The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
Figure 5
is low in case of open input pin. The zener diode protects the input circuit against ESD pulses.
Figure 5
A high signal at the input pin causes the DMOS to switch on.
5.2
The on-state resistance R
shows these dependencies for the typical on-state resistance. The on-state resistance in reverse polarity mode is
described in
Figure 6
5.3
The power stage is designed for high side configuration
Datasheet
12,5
mΩ
7,5
2,5
10
5
0
shows the input circuit of the BTS50070-1EGA. The input resistor to ground ensures that the input signal
-40
Power Stages
Input Circuit
Input Circuit
Output On-State Resistance
Chapter
Typical On-State Resistance
Output Timing
0
V
6.5.
bb
= 13.5 V
40
DS(ON)
80
depends on the supply voltage V
typ.
120 160
°C
IN
GND
10
(Figure
R
PΩ
IN



9).


bb

and the junction temperature
9
Smart High-Side Power Switch

EE X

    
T
j
BTS50070-1EGA
= 25°C
V1.0, 2009-04-06
W\S
Power Stages
9
T
j
.
Figure 6
Input.emf