BTS 3110N Infineon Technologies, BTS 3110N Datasheet

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BTS 3110N

Manufacturer Part Number
BTS 3110N
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 3110N

Packages
PG-SOT223-4
Channels
1.0
Vds (max)
42.0 V
Id(nom)
1.4 A
Rds (on) (max)
220.0 mOhm
Id(lim) (min)
5.0 A
Datasheet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application



General Description
N channel vertical power FET in Smart SIPMOS
protection functions.
All kinds of resistive, inductive and capacitive loads in switching
µC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
or linear applications
Pin 1
In
HITFET
ESD
Gate-Driving
Unit
Overload
Protection
Current
Limitation
Over-
temperature
Protection
Overvoltage-
Protection
Short circuit
Protection
1
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy

technology. Fully protected by embedded
Smart Low Side Power Switch
Source
Drain
Pin 2 and 4 (TAB)
V
Pin 3
bb
V
R
I
E
D(Nom)
4
HITFET BTS 3110N
DS
AS
DS(on)
Rev. 1.3, 2008-04-14
1
200
150
1.4
42
2
VPS05163
M
V
m
A
mJ
3

Related parts for BTS 3110N

BTS 3110N Summary of contents

Page 1

... Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy technology. Fully protected by embedded  Current Overvoltage- Limitation Protection Over- Short circuit temperature Protection Protection 1 Smart Low Side Power Switch HITFET BTS 3110N 200 DS(on) I 1.4 D(Nom) E 150 VPS05163 V ...

Page 2

... Symbol (Human Body Model Smart Low Side Power Switch HITFET BTS 3110N Value DS(SC) no limit | -40 ...+150 j -55 ... +150 stg 3.8 tot 150 ESD thJA 125 72 17 thJS Rev ...

Page 3

... Datasheet Symbol V DS(AZ -40 ... +150°C DSS V IN(th) I IN(on) R DS(on) R DS(on) I D(Nom ° >2.5 V) D(lim) = 200 µs 3 Smart Low Side Power Switch HITFET BTS 3110N Values Unit min. typ. max 1.5 10 µA V 1.3 1.7 2.2 0 µ 190 240 ...

Page 4

... off = - IN(Prot) I IN(Prot Smart Low Side Power Switch HITFET BTS 3110N Values min. typ. max 100 - 60 100 - 0.4 1.5 / 0.6 1.5 /dt DS off 150 175 25 50 300 - 40 300 150 - ...

Page 5

... Input circuit (ESD protection) Input Datasheet Inductive and overvoltage output clamp Short circuit behaviour V IN Gate Drive I IN Source/ I Ground Smart Low Side Power Switch HITFET BTS 3110N HITFET Rev. 1.3, 2008-04-14 ...

Page 6

... ON m 100 ° 150 Typ. input threshold voltage =5V V IN(th) max. typ. 75 100 125 °C 175 Smart Low Side Power Switch HITFET BTS 3110N = f =1.4A; V =10V 500 400 350 300 250 200 150 100 50 0 -50 - 100 125 ° ...

Page 7

... I D(lim) Parameter Typ. off-state drain current I = f(T DSS 11 µ Smart Low Side Power Switch HITFET BTS 3110N = f =12V 100 125 °C -50 - ...

Page 8

... Datasheet 10 Typ. transient thermal impedance Z =f(t thJA Parameter: D -40°C 25°C 85°C 150°C ms 0.4 0. Smart Low Side Power Switch HITFET BTS 3110N cooling area D=0.5 0.2 1 0.1 0.05 0.02 0 0.01 Single pulse - ...

Page 9

... Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 4 3 2.3 9 Smart Low Side Power Switch HITFET BTS 3110N Package Outlines 1.6 ±0.1 0.1 MAX ...

Page 10

... Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2004-02-02 released production version Datasheet Smart Low Side Power Switch 10 HITFET BTS 3110N Revision History Rev. 1.3, 2008-04-14 ...

Page 11

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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