BSS192P Infineon Technologies, BSS192P Datasheet - Page 3

• Manufacturer Part Number: BSS192P
• Manufacturer: Infineon Technologies

Specifications of BSS192P

• Package: SOT-89
• Vds (max): -250.0 V
• Rds (on) (max) (@10v): 12,000.0 mOhm
• Rds (on) (max) (@4.5v): 15,000.0 mOhm
• Rds (on) (max) (@2.5v): -

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev 1.6
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
|V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
GS
DD
DD
DD
GS
DD
A
GS
R
F
DS
=-0.1A
=-0.19A, R
=25°C
=-125V, I
/dt=100A/µs
=0, V
=-125V, V
=-200V, I
=-200V, I
=0 to -10V
=-200V, I
=0, I
| 2*|I
Conditions
F
DS
D
=-0.19A
|*R
F =
=-25V,
G
D
D
D
DS(on)max
GS
=2
l
S
=-0.19A
=-0.19A,
=-0.19A
,
=-10V,
,
min.
0.19
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-2.63
-0.78
0.38
typ.
-0.2
-1.9
-4.9
4.7
5.2
83
13
72
50
46
72
6
-
-
BSS 192 P
2012-03-14
max.
-0.25 nC
-0.19 A
-0.76
104
108
-2.4
-6.1
-1.1
16
75
57
90
8
7
8
-
-
Unit
S
pF
ns
V
V
ns
nC