BFP640 Infineon Technologies, BFP640 Datasheet

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BFP640

Manufacturer Part Number
BFP640
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP640

Packages
SOT343
Vceo (max)
4.0 V
Ic(max)
50.0 mA
Nfmin (typ)
0.65 dB
Gmax (typ)
24.0 dB
Oip3
26.5 dBm

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NPN Silicon Germanium RF Transistor
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP640
1
Pb-containing package may be available upon special request
High gain low noise RF transistor
Provides outstanding performance
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.65 dB at 1.8 GHz
High maximum stable gain
Gold metallization for extra high reliability
70 GHz f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
for a wide range of wireless applications
Outstanding noise figure F = 1.2 dB at 6 GHz
G
ms
= 24 dB at 1.8 GHz
T
-Silicon Germanium technology
Marking
R4s
1=B
1)
2=E
Pin Configuration
3=C
1
4=E
-
4
-
3
Package
SOT343
2007-05-29
BFP640
1
2

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BFP640 Summary of contents

Page 1

... Gold metallization for extra high reliability 70 GHz f -Silicon Germanium technology T Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BFP640 R4s 1 Pb-containing package may be available upon special request 1) Pin Configuration 1=B 2=E 3=C 4=E 1 BFP640 Package - - SOT343 2007-05-29 ...

Page 2

... CES V CBO V EBO tot stg Symbol R thJS = 25°C, unless otherwise specified A Symbol V (BR)CEO I CES I CBO I EBO BFP640 Value Unit 200 mW 150 °C -65 ... 150 -65 ... 150 Value Unit K/W 300 Values Unit min. typ. max µ ...

Page 3

... A Symbol Sopt = Z S Sopt Sopt Sopt 21e = = GHz = , . L P -1dB = GHz = , . L 3 BFP640 Values Unit min. typ. max GHz - 0. 26.5 - dBm - 13 - 2007-05-29 ...

Page 4

... PTF = 0 - MJC = 0.5 fF CJS = 93.4 - XTB = -1. 0 7.291E-11 TITF2 1.0E-5 LCC C S LCB RCS CCS E RES CES CCEI LEB CCEO E 4 BFP640 1.025 ISE = 400 ISC = 1.522 IRB = 3.061 RC = 0.3 MJE = 1.5 VTF = 67.43 CJC = 1 XCJC = 0.6 VJS = 1.078 EG = 298 TNOM 120 LBC = 120 LCC = 20 ...

Page 5

... T ) Permissible Pulse Load K 150 Collector-base capacitance 1MHz 0.25 pF 0.15 0.1 0. BFP640 = ( t ) thJS p 0.5 0.2 0.1 0.05 0.02 0.01 0.005 2007-05- ...

Page 6

... Power Gain |² ( 3V 0.9GHz 1.8GHz 35 2.4GHz 30 3GHz 25 4GHz 20 5GHz 15 6GHz BFP640 = ( 0. 30mA C Gms |S21|² Gma GHz f 2007-05- ...

Page 7

... V 3 Noise figure 3V 1.8 1.6 1 Sopt 0.6 0.4 0 BFP640 ( Sopt f = 6GHz f = 5GHz f = 4GHz f = 3GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz [mA Sopt I = 30mA 5.0mA [GHz] 2007-05-29 ...

Page 8

... Source impedance for min. noise figure vs. frequency mA 1.5 0.5 0.4 0.3 0.2 2.4GHz 1.8GHz 0.1 3GHz 0.1 0.2 0.3 0.4 0.5 1 1.5 2 4GHz 0 5GHz −0.1 6GHz −0.2 −0 30mA −0.4 c −0.5 −1.5 − 5.0mA 0.9GHz −10 −5 −4 −3 −2 8 BFP640 2007-05-29 ...

Page 9

... Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1 0.15 +0.1 0.6 -0.05 0 0.6 1.15 0.9 Manufacturer 2005, June Date code (YM) BGA420 Pin 1 Type code 0.2 4 2.15 1.1 9 BFP640 A +0.1 -0.05 2007-05-29 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. www.infineon.com 10 BFP640 ). 2007-05-29 ...

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