2SK2611 TOSHIBA Semiconductor CORPORATION, 2SK2611 Datasheet

no-image

2SK2611

Manufacturer Part Number
2SK2611
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2SK2611
Manufacturer:
TOS
Quantity:
805
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2SK2611
Manufacturer:
TOSHIBA
Quantity:
50
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2SK2611
Manufacturer:
SANYO
Quantity:
12 500
Price:
DC−DC Converter, Relay Drive and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement−mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
= 90 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
= 25°C (initial), L = 15 mH, R
(Note 1)
(Note 2)
: I
: V
DSS
th
= 2.0~4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK2611
fs
|
=
DS
7.0 S (typ.)
= 1.1 Ω (typ.)
= 10 V, I
−55~150
Rating
DS
0.833
Max
900
900
±30
150
663
150
G
27
15
50
9
9
1
= 25 Ω, I
= 720 V)
D
= 1 mA)
AR
°C / W
°C / W
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 9 A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
2-16C1B
SC-65
2006-11-10
2SK2611
Unit: mm

Related parts for 2SK2611

2SK2611 Summary of contents

Page 1

... 150 ° −55~150 °C stg Symbol Max Unit R 0.833 ° (ch− ° (ch− Ω 2SK2611 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ 2006-11-10 Unit: mm ...

Page 2

... Symbol Test Condition I — — DRP DSF 2SK2611 Min Typ. Max — — ±10 ±30 — — — — 100 900 — — 2.0 — 4.0 — 1.1 1.4 3.0 7.0 — — 2040 — ...

Page 3

... 3 2SK2611 2006-11-10 ...

Page 4

... 4 2SK2611 2006-11-10 ...

Page 5

... Ω 2SK2611 1 ⎛ B ⎞ VDSS ⋅ L ⋅ ⋅ ⎜ ⎟ − ⎝ ⎠ VDSS DD 2006-11-10 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2611 20070701-EN 2006-11-10 ...

Related keywords