IRFP260N International Rectifier Corp., IRFP260N Datasheet

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IRFP260N

Manufacturer Part Number
IRFP260N
Description
Manufacturer
International Rectifier Corp.
Datasheet

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www.irf.com
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Description
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.24
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to +175
D
S
Max.
200
300
560
2.0
±20
50
35
50
30
10
IRFP260N
®
R
Power MOSFET
V
DS(on)
Max.
0.50
TO-247AC
–––
40
DSS
I
D
= 50A
PD - 94004B
= 200V
= 0.04Ω
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
10/08/04
1

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IRFP260N Summary of contents

Page 1

... R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS  ‚   ƒ 300 (1.6mm from case ) Typ. 0. 94004B IRFP260N ® HEXFET Power MOSFET 200V DSS R = 0.04Ω DS(on 50A D S TO-247AC Max. Units 200 300 W 2 ...

Page 2

... IRFP260N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage ...

Page 3

... Gate-to-Source Voltage (V) GS www.irf.com 1000 TOP 100 BOTTOM 10 1 ° 0.1 100 0.1 3 3.0 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 0 9.0 10.0 IRFP260N VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 50A V = 10V 100 120 140 160 180 ° ...

Page 4

... IRFP260N 8000 0V MHZ C iss = SHORTED 7000 C rss = oss = 6000 Ciss 5000 4000 Coss 3000 2000 Crss 1000 Drain-to-Source Voltage (V) 1000 100 ° 175 ° 0.1 0.2 0.6 1.0 1.4 V ,Source-to-Drain Voltage (V) ...

Page 5

... SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 www.irf.com 90% 90% 150 175 150 175 ° 10% 10% ° 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP260N + - ≤ 1 ≤ 1 ≤ 0.1 % ≤ 0 d(on) d(on d(off) d(off Notes: 1 ...

Page 6

... IRFP260N D.U 20V 0.01 Ω Charge 6 1500 15V DRIVER 1000 + 500 V (BR)DSS 0 25 Starting T , Junction Temperature ( C) 12V I D TOP 11A 20A BOTTOM 28A 50 75 100 125 150 J Current Regulator Same Type as D.U.T. 50KΩ ...

Page 7

... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% IRFP260N + - V =10V ...

Page 8

... IRFP260N EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" This product has been designed and qualified for the Automotive [Q101] market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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