IRFW644B Fairchild Semiconductor, IRFW644B Datasheet

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IRFW644B

Manufacturer Part Number
IRFW644B
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2001 Fairchild Semiconductor Corporation
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converter and
switch mode power supplies.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
stg
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
IRFW Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 14A, 250V, R
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
IRFI Series
I
2
-PAK
IRFW644B / IRFI644B
DS(on)
Typ
--
--
--
-55 to +150
= 0.28
13.9
3.13
1.11
480
139
300
250
8.9
5.5
14
56
14
30
G
   
   
@V
Max
62.5
0.9
40
GS
   
   
= 10 V
   
   
   
   
November 2001
D
S


 
 


 
 








 
 
   
   
Rev. B, November 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A

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IRFW644B Summary of contents

Page 1

... A = 25°C) C Parameter November 2001 = 0. DS(on IRFW644B / IRFI644B Units 250 8 480 13.9 mJ 5.5 V/ns 3.13 W 139 W 1.11 W/°C -55 to +150 °C 300 °C Typ Max Units -- 0.9 °C °C/W -- 62.5 °C/W Rev. B, November 2001 ...

Page 2

... 14A, di/dt  300A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C D ...

Page 3

... Drain Current and Gate Voltage 3500 3000 2500 C iss 2000 C 1500 oss C 1000 rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 1 10 150 Notes : 1. 250 s Pulse Test 25 Figure 2. Transfer Characteristics Note : T ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0  Notes : 250  0.5 D 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2001 Fairchild Semiconductor Corporation 2 D -PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Dimensions in Millimeters Rev. B, November 2001 ...

Page 8

... Package Dimensions (Continued) 9.90 1.27 0.10 2.54 TYP 10.00 ©2001 Fairchild Semiconductor Corporation 2 I -PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Dimensions in Millimeters Rev. B, November 2001 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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