IRFZ48N International Rectifier Corp., IRFZ48N Datasheet

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IRFZ48N

Manufacturer Part Number
IRFZ48N
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Description
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
www.irf.com
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
@ T
@ T
JC
CS
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Power Dissipation
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter

The low thermal

ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
TO-220AB
Max.
0.83
210
130
± 20
5.0
64
45
32
13
®
IRFZ48N
R
Power MOSFET
DS(on)
Max.
V
1.15
–––
62
DSS
I
D
= 64A
PD - 91406
= 55V
= 14m
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1
1/3/01

IRFZ48N Summary of contents

Page 1

... JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G The low thermal @ 10V GS @ 10V GS    ƒ 300 (1.6mm from case ) Typ. 0. 91406 IRFZ48N ® HEXFET Power MOSFET 55V DSS R = 14m DS(on 64A D S TO-220AB Max. Units 210 ...

Page 2

... IRFZ48N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... BOTTOM 100 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 2 2.0 ° 175 C J 1.5 1.0 0.5 = 25V 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRFZ48N VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 64A V = 10V 100 120 140 160 180 ° ...

Page 4

... IRFZ48N 3500 1MHz iss 3000 rss oss ds gd 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° ...

Page 5

... Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRFZ48N D.U. µ d(off ...

Page 6

... IRFZ48N . Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 360 300 240 ...

Page 7

... R I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% = 5.0V for Logic Level and 3V Drive Devices GS ® HEXFET power MOSFETs IRFZ48N „ P.W. Period [ ] *** V =10V ...

Page 8

... IRFZ48N Package Outline TO-220AB Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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