K6R4008V1C Samsung, K6R4008V1C Datasheet

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K6R4008V1C

Manufacturer Part Number
K6R4008V1C
Description
Manufacturer
Samsung
Datasheet

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K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
3Document Title
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
512Kx8 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Rev No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Rev. 5.0
History
Initial release with Preliminary.
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed I
Relax D.C parameters.
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
Add Low Power-Ver.
Delete 20ns speed bin
10ns
12ns
15ns
20ns
I
CC
195mA
190mA
185mA
Item
SB1
I
CC
-
to 20mA
12ns
15ns
20ns
Previous
70mA
I
sb
20mA
I
sb1
Previous
160mA
155mA
150mA
155mA
145mA
135mA
125mA
I
CC
- 1 -
Current
60mA
I
Current
195mA
190mA
185mA
sb
10mA
I
sb1
Feb. 12. 1999
Mar. 29. 1999
Aug. 19. 1999
Mar. 27. 2000
Apr. 24. 2000
Sep. 24. 2001
Draft Data
CMOS SRAM
PRELIMINARY
September 2001
Preliminary
Preliminary
Preliminary
Final
Final
Final
Remark
Rev 5.0

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K6R4008V1C Summary of contents

Page 1

... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Rev. 1.0 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed I to 20mA SB1 Rev. 2.0 Relax D.C parameters. ...

Page 2

... The K6R4008V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG s advanced CMOS process and designed for high-speed circuit technology ...

Page 3

... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P PIN CONFIGURATION (Top View I I 36-SOJ Vcc 9 Vss PIN FUNCTION Pin Name Pin Function Address Inputs Write Enable ...

Page 4

... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P RECOMMENDED DC OPERATING CONDITIONS* Parameter Supply Voltage Ground Input High Voltage Input Low Voltage * The above parameters are also guaranteed at industrial temperature range (Min) = -2.0V a.c(Pulse Width 8ns) for I IL *** V (Max 2.0V a.c (Pulse Width 8ns) for AND OPERATING CHARACTERISTICS* Parameter ...

Page 5

... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P AC CHARACTERISTICS ( TEST CONDITIONS* Parameter Input Pulse Levels Input Rise and Fall Times Input and Output timing Reference Levels Output Loads *The above test conditions are also applied at industrial temperature range. Output Loads( OUT ...

Page 6

... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P WRITE CYCLE* Parameter Symbol Write Cycle Time t WC Chip Select to End of Write t CW Address Set-up Time t AS Address Valid to End of Write t AW Write Pulse Width(OE High Write Pulse Width(OE Low) t WP1 Write Recovery Time t WR Write to Output High-Z ...

Page 7

... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P TIMING WAVEFORM OF WRITE CYCLE(1) Address High-Z Data in Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address CS WE High-Z Data in Data out TIMING WAVEFORM OF WRITE CYCLE(3) Address CS WE High-Z Data in High-Z Data out (OE= Clock CW( WP(2) AS( Valid Data t OHZ(6) ...

Page 8

... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ; A write ends at the earliest transition CS going high or WE going high ...

Page 9

... K6R4008V1C-C/C-L, K6R4008V1C-I/C-P PACKAGE DIMENSIONS 36-SOJ-400 #36 11.18 0.12 0.440 0.005 #1 +0.10 0.43 -0.05 +0.004 0.017 0.95 -0.002 ( ) 0.0375 44-TSOP2-400BF #44 #1 18.81 MAX 0.741 18.41 0.10 0.725 0.004 0.10 0.30 0.805 0. 0.004 0.032 0.012 0.002 #19 #18 23.90 MAX 0.941 23.50 0.12 0.925 0.005 ( ( +0.10 0.71 -0.05 1.27 +0.004 0.028 0.050 -0.002 #23 11.76 0.20 0.463 0.008 #22 1.00 1.20 0.10 MAX 0.039 0.047 0.004 0.10 0.05 0.004 MIN 0.80 0.002 0.0315 ...

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