STP15NM65N STMicroelectronics, STP15NM65N Datasheet - Page 3

• Manufacturer Part Number: STP15NM65N
• Description: N-channel 650V - 0.25 Ohm - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET
• Manufacturer: STMicroelectronics

STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Rthj-case
Rthj-amb
Symbol
dv/dt
Symbol
Symbol
I
SD
DM
P
V
V
V
T
E
I
I
TOT
I
T
ISO
GS
T
DS
stg
D
D
AS
AS
≤ 15.5A, di/dt ≤ 400A/µs, V
j
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-case Max
Thermal resistance junction-amb Max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj=25 °C, I
DD
= 80% V
Parameter
Parameter
Parameter
D
C
= I
= 25°C
GS
AS
(BR)DSS
=0)
, V
DD
C
C
= 50 V)
= 25°C
= 100°C
C
=25°C)
D²PAK/TO-247
D²PAK/TO-247
TO-220/I²PAK
TO-220/I²PAK
15.5
150
0.83
10
62
--
Max value
-55 to 150
Value
Value
± 25
650
62.5
400
300
15
4
Electrical ratings
TO-220FP
TO-220FP
15.5
2500
10
62
35
3.6
(1)
(1)
(1)
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
W
°C
A
V
V
A
A
A
V
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