STP20N10L STMicroelectronics, STP20N10L Datasheet - Page 3

• Manufacturer Part Number: STP20N10L
• Description: N-Channel Enhancement Mode Low Threshold Power MOS Transistor
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Symbol
Symbol
Symbol
(di/dt)
I
V
t
SDM
t
I
S D
r(Vof f)
Q
Q
d(on)
I
Q
RRM
Q
S D
t
t
t
t
rr
c
r
gs
gd
f
rr
g
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
R
(see test circuit, figure 5)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 50
= 50
= 50
= 20 A
= 20 A
= 30 V
= 80 V
= 80 V
= 80 V
= 50 V
Test Conditions
Test Conditions
Test Conditions
V
V
I
I
di/dt = 100 A/ s
D
GS
D
T
V
V
I
I
GS
D
D
j
= 20 A
= 20 A
GS
GS
= 150
= 10 A
= 20 A
= 0
= 5 V
= 5 V
= 5 V
Safe Operating Areas For ISOWATT220
o
C
V
GS
= 5 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
140
140
160
130
0.4
50
22
12
80
80
6
6
STP20N10L/FI
Max.
Max.
Max.
200
110
110
220
1.5
70
30
20
80
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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