IXTH100N25P IXYS Corporation, IXTH100N25P Datasheet
IXTH100N25P
Manufacturer Part Number
IXTH100N25P
Description
Transistor Mosfet N-CH 250V 100A 3TO-247
Manufacturer
IXYS Corporation
Datasheet
1.IXTH100N25P.pdf
(5 pages)
PolarHT
Power MOSFET
© 2004 IXYS All rights reserved
N-Channel Enhancement Mode
Symbol
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
stg
L
DGR
GSM
AR
D
JM
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-264
TO-268
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
TM
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
= 0.5 I
G
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
IXTQ 100N25P
IXTK 100N25P
IXTT 100N25P
Advanced Technical Information
JM
,
250
Min. Typ.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
250
250
±20
100
250
600
150
300
2.0
5.5
75
60
60
10
10
5
±100
250
Max.
5.0
25
27
V/ns
mΩ
mJ
nA
µA
µA
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
g
g
J
V
R
I
Advantages
TO-3P (IXTQ)
G = Gate,
S = Source,
TO-268 (IXTT)
TO-264(SP) (IXTK)
G = Gate
S = Source
Features
D25
PolarHT
utilize proprietary designs and
process. US patent is pending.
DSS
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
DS(on)
Easy to mount
Space savings
High power density
G
G
D
D
S
= 250
= 100
=
S
G
TM
DMOS transistors
S
D = Drain,
TAB = Drain
D = Drain
TAB = Drain
27 mΩ Ω Ω Ω Ω
DS99118B(07/04)
V
A
D (TAB)
D (TAB)
(TAB)
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IXTH100N25P Summary of contents
Page 1
PolarHT TM Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V GSM 25°C D25 C I External lead current limit ...
Page 2
... F -di/dt = 100 A/µ 100 TO-264 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. , pulse test 40 56 ...
Page 3
Fig. 1. Output Characteristics @ 25 100 V = 10V 0 Volts DS Fig. 3. Output Characteristics @ 125 ...
Page 4
Fig. 7. Input Adm ittance 150 125 100 125ºC J 25ºC -40º 4 Volts GS Fig. 9. Source Current vs. Source-To-Drain Voltage 300 250 200 150 100 T ...
Page 5
IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXTQ 100N25P IXTT 100N25P IXTK 100N25P 100 1000 ...