APT30DS20HJ Microsemi Corporation, APT30DS20HJ Datasheet

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APT30DS20HJ

Manufacturer Part Number
APT30DS20HJ
Description
Isotop Schottky Diode Full Bridge Power Module
Manufacturer
Microsemi Corporation
Datasheet
Absolute maximum ratings
Symbol
V
I
I
F(AV)
V
FSM
RRM
Full Bridge Power Module
R
ISOTOP
~
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Average Forward
Current
Non-Repetitive Forward Surge Current
+
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
®
Schottky Diode
-
Parameter
~
Duty cycle = 50%
www.microsemi.com
Application
Features
Benefits
8.3ms
Switch mode power supplies rectifier
Induction heating
Welding equipment
Ultra fast recovery times
Soft recovery characteristics
High current
Very low stray inductance
High level of integration
ISOTOP
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
T
T
T
C
C
J
= 45°C
= 25°C
= 80°C
V
I
F
RRM
= 30A @ Tc = 80°C
®
Package (SOT-227)
APT30DS20HJ
= 200V
Max ratings
200
320
45
30
Unit
V
A
1 - 4

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APT30DS20HJ Summary of contents

Page 1

... Maximum Peak Repetitive Reverse Voltage RRM Maximum Average Forward I F(AV) Current I Non-Repetitive Forward Surge Current FSM These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APT30DS20HJ V = 200V RRM I = 30A @ Tc = 80°C F Application • Switch mode power supplies rectifier • ...

Page 2

... T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight APT30DS20HJ = 25°C unless otherwise specified j Test Conditions Min I = 30A 60A 30A T = 125° ...

Page 3

... T =125° =133V 400 600 800 0 100 1000 www.microsemi.com APT30DS20HJ 1 10 Trr vs. Current Rate of Charge T =125° =133V 200 400 600 800 -di /dt (A/µs) F vs. Current Rate of Charge ...

Page 4

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT30DS20HJ 11.8 (.463) 12.2 (.480) 8 ...

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