STP4931 Stanson Technology Co., Ltd., STP4931 Datasheet - Page 3

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STP4931

Manufacturer Part Number
STP4931
Description
Dual P Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP4931
Manufacturer:
STANSON
Quantity:
20 000
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
Static
Static
Static
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Tran Conductance
Diode Forward Voltage
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Turn-On Time
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Parameter
Parameter
Parameter
Parameter
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted )
CHARACTERISTICS
Symbol
Symbol
Symbol
Symbol
T
V
R
V
J
I
(BR)DSS
t
Coss
t
=55 ℃
Crss
I
I
Ciss
DS(on)
V
GS(th)
D(on)
g
Q
Q
d(off)
d(on)
Q
GSS
DSS
tr
tf
SD
fs
gd
gs
g
I
V
V
V
V
V
V
V
D
V
Dual P Channel Enhancement Mode MOSFET
V
V
V
V
V
GS
GS
DS
DS
GS
I
=-1.0A,V
DS
DS
GS
DD
DS
S
DS
DS
DS=-
=-4.5V, I
=-2.5V, I
=-10V,V
=V
=-2.5A,V
=-1.8V,I
=-5.0V,I
=0V,I
=-10V,R
=0V,V
=-16V,V
=-20V,V
=-15V,VGS=0V
Condition
Condition
Condition
Condition
I
GS
5V,V
f=1MHz
R
D
≡ -10A
G
,I
=6 Ω
D
D
GEN
=-250uA
=-250 uA -0.35
GS
GS
GS
D
D
D
D
GS
L
= ± 12V
GS
GS
=4.5V
=-5.0A
=-8.5A
=-8.0A
=-10A
=-5.0V
=15Ω
=-4.5V
=0V
=0V
=0V
STP
STP
STP
STP4931
Copyright © 2007, Stanson Corp.
Min
Min
Min
Min Typ
-20
-25
4931
4931
4931
STP4931 2009. V1
0.016
0.020
0.028
2670
Typ
-0.8 -1.2
Typ
Typ Max
520
480
145
4.5
8.0
36
30
25
45
70
0.020
0.025
0.035
± 100
Max
Max
Max Unit
-0.9
240
115
-10
45
40
70
-1
-
8.5A
0
Unit
Unit
Unit
nA
uA
nC
nS
pF
Ω
V
V
A
S
V

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