BUT11AX NXP Semiconductors, BUT11AX Datasheet - Page 3
BUT11AX
Manufacturer Part Number
BUT11AX
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BUT11AX.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
November 1995
Silicon Diffused Power Transistor
R
Fig .3. Test circuit resistive load. V
B
and R
30-60 Hz
250
200
100
VIM
0
IC / mA
0
V
Fig.2. Oscilloscope display for V
CC
L
T
= 250 V; t
calculated from I
Fig.1. Test circuit for V
tp
6V
p
300R
= 20 s; = t
R
VCE / V
B
Con
and I
p
R
VCC
CEOsust
Oscilloscope
Bon
T.U.T.
/ T = 0.01.
L
1R
VCEOsust
IM
100-200R
Horizontal
Vertical
min
requirements.
= -6 to +8 V
CEOsust
.
+ 50v
.
3
Fig. 6. Switching times waveforms with inductive load.
Fig. 4. Switching times waveforms with resistive load.
V
CC
IB
IC
-VBB
IB
IC
IBon
= 300 V; -V
Fig. 5. Test circuit inductive load.
10 %
tr 30ns
ton
BE
90 %
= 5 V; L
LB
-IBoff
ts
toff
IBon
C
= 200 uH; L
LC
Product specification
ts
toff
tf
90 %
ICon
VCC
-IBoff
IBon
10 %
BUT11AX
ICon
tf
B
T.U.T.
= 1 uH
Rev 1.100
90 %
10 %
t
t