SDB10S30 Infineon Technologies Corporation, SDB10S30 Datasheet

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SDB10S30

Manufacturer Part Number
SDB10S30
Description
Silicon Carbide Schottky Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
Silicon Carbide Schottky Diode
• Revolutionary semiconductor
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
• No forward recovery
Type
SDB10S30
Maximum Ratings, at T
Parameter
Continuous forward current,
RMS forward current,
Surge non repetitive forward current, sine halfwave
T
Repetitive peak forward current
T
Non repetitive peak forward current
t
i
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation,
Operating and storage temperature
Rev. 1.1
p
C
j
2
=10µs, T
=150°C, T
material - Silicon Carbide
the switching behavior
t value,
=25°C, t
C
p
C
=25°C
T
=10ms
C
=100°C, D=0.1
=25°C, t
Package
P-TO220-3.SMD Q67040-S4373
T
p
=10ms
C
=25°C
f=50Hz
j
= 25 °C, unless otherwise specified
T
C
=100°C
Ordering Code
Page 1
Symbol
I
I
I
I
I
V
V
P
T
F
FRMS
FSM
FRM
FMAX
i
2
j ,
RRM
RSM
tot
dt
T
Marking
D10S30
thinQ!
stg
Product Summary
V
Q
I
SiC Schottky Diode
F
Pin 1
-55... +175
n.c.
RRM
c
Value
100
300
300
6.5
10
14
36
45
65
P-TO220-3.SMD
Pin 2
C
SDB10S30
2005-02-18
300
23
10
Unit
A
A²s
V
W
°C
Pin 3
A
V
nC
A

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SDB10S30 Summary of contents

Page 1

... SiC Schottky Diode Product Summary V RRM P-TO220-3.SMD Marking Pin 1 Pin 2 D10S30 n.c. Value FRMS 36 FSM 45 FRM 100 FMAX 6 300 RRM 300 RSM 65 tot T -55... +175 j , stg SDB10S30 V 300 Pin Unit A A² °C 2005-02-18 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.1 Symbol R thJC R thJA °C, unless otherwise specified j Symbol Page 2 SDB10S30 Values Unit min. typ. max 2.3 K Values Unit min ...

Page 3

... Total capacitance =0V, T =25°C, f =1MHz =150V, T =25°C, f =1MHz =300V, T =25°C, f =1MHz Rev. 1 °C, unless otherwise specified j Symbol Q c =150° =150° Page 3 SDB10S30 Values Unit min. typ. max n. 600 - - 2005-02-18 ...

Page 4

... Typ. forward power dissipation vs. average forward current P F(AV -40°C 25°C 12 100°C 125°C 150°C 1.6 1 Page 4 SDB10S30 ) C ≤ 175 ° 100 120 140 =100° ...

Page 5

... V 300 Typ. C stored energy E =f(V C µ Page SDP10S30 single pulse - 2.5 1 100 150 200 SDB10S30 D = 0.50 0.20 0.10 0.05 0.02 0. 300 V R 2005-02-18 ...

Page 6

... Typ. capacitive charge vs. current slope parameter 150 ° *0 100 200 300 400 500 600 700 800 Rev. 1 A/µs 1000 di /dt F Page 6 SDB10S30 2005-02-18 ...

Page 7

... P 0.00 0.20 Q 3.30 3.90 8° max R S 1.70 2.50 T 0.50 0.65 10.8 typ. U 1.35 typ. V 6.43 typ. W 4.60 typ. X 9.40 typ. Y 16.15 typ. Z Page 7 SDB10S30 dimensions [inch] min max 0.3858 0.3937 0.0512 typ. 0.0492 0.0689 0.0374 0.0453 0.1 typ. 0.0283 0.0335 0.2 typ. 0.1693 0.1772 0.0504 0.0551 0.3543 0.3701 0.0906 0.0984 0.5551 typ. 0.0000 0.0079 0.1299 0.1535 8° ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 Page 8 SDB10S30 2005-02-18 ...

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