ES1PB Vishay, ES1PB Datasheet
ES1PB
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ES1PB Summary of contents
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... Maximum reverse recovery time 0 Document Number: 88918 Revision: 25-Jun-07 New Product ES1PB, ES1PC & ES1PD Vishay General Semiconductor FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Ultrafast recovery times for high efficiency • ...
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... ES1PB, ES1PC & ES1PD Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER 1 Typical reverse recovery time 1 1 Typical reverse recovery time 1 Typical junction capacitance at 4 MHz Note: (1) Pulse test: 300 µs pulse width duty cycle ...
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... Figure 6. Typical Transient Thermal Impedance DO-220AA (SMP) Cathode band 0.053 (1.35) 0.041 (1.05) 0.103 (2.60) 0.087 (2.20) 0.045 (1.15) 0.033 (0.85) 0.100 (2.54) 0.018 (0.45) 0.006 (0.15) ES1PB, ES1PC & ES1PD Vishay General Semiconductor 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance 0 100 t - Pulse Duration (s) 0.012 (0.30) REF 0.036 (0.91) 0.024 (0.61) ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...