BST80 NXP Semiconductors, BST80 Datasheet

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BST80

Manufacturer Part Number
BST80
Description
N-channel Enhancement Mode Vertical D-mos Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BST80
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC13b
DATA SHEET
BST80
N-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
1997 Jun 20

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BST80 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BST80 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 20 ...

Page 2

... Bottom view Marking code: KM Fig.1 Simplified outline and symbol. CONDITIONS open drain amb I = 500 mA 500 mA Product specification BST80 DESCRIPTION source drain gate MAM355 TYP. MAX. UNIT 500 ...

Page 3

... MHz 500 500 Product specification BST80 MIN. MAX. UNIT 500 +150 C 150 C VALUE UNIT 125 K/W MIN. TYP. MAX. UNIT ...

Page 4

... MHz (1) C iss (2) C oss (3) C rss Fig.5 4 Product specification off Fig.3 Input and output waveforms ( Capacitance as a function of drain-source voltage; typical values. BST80 10 % MBB692 MDA176 (1) (2) (3) 30 ...

Page 5

... Fig.7 Transfer characteristic; typical values. 1.2 k 1.1 1 0.9 0.8 0 GSth ------------------------------------- - GSth at 1 mA. GSth Temperature coefficient of gate-source threshold voltage; typical values. Product specification BST80 MDA172 (V) MDA175 100 150 ...

Page 6

... Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 3 handbook, halfpage k 2.5 2 1 DSon ---------------------------------------- - DSon I = 500 mA Fig.10 Temperature coefficient of drain-source on-state resistance; typical values. 1997 Jun 20 MDA174 100 150 Product specification BST80 ...

Page 7

... IEC SOT89 1997 Jun 20 drain pad for good heat transfer; 3 leads scale 0.44 4.6 2.6 4.25 3.0 1.5 0.37 4.4 2.4 3.75 REFERENCES JEDEC EIAJ 7 Product specification min. 0.8 0.13 EUROPEAN PROJECTION BST80 SOT89 ISSUE DATE 97-02-28 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jun 20 8 Product specification BST80 ...

Page 9

... Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 NOTES 9 Product specification BST80 ...

Page 10

... Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 NOTES 10 Product specification BST80 ...

Page 11

... Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 1997 Jun 20 NOTES 11 Product specification BST80 ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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