SI7115DN Vishay, SI7115DN Datasheet

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SI7115DN

Manufacturer Part Number
SI7115DN
Description
P-channel 150-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
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Part Number:
SI7115DN
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7115DN-T1-E3
Manufacturer:
VIS
Quantity:
20 000
Part Number:
SI7115DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
12 000
Part Number:
SI7115DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
310
Part Number:
SI7115DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7115DN-T1-GE3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 sec.
c. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Based on T
Document Number: 73864
S-70943–Rev. A, 14-May-07
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
V
- 150
DS
Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free)
(V)
8
C
3.30 mm
D
= 25 °C.
0.315 at V
0.295 at V
7
D
r
6
DS(on)
D
PowerPAK 1212-8
GS
GS
Bottom View
5
D
J
(Ω)
= - 6.0 V
= - 10 V
= 150 °C)
1
P-Channel 150-V (D-S) MOSFET
S
2
S
I
3
- 8.9
- 8.6
D
S
(A)
3.30 mm
e
e
4
c, d
G
A
Q
23.2 nC
= 25 °C, unless otherwise noted
g
(Typ)
New Product
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• Low Thermal Resistance PowerPAK
• UIS and R
• Active Clamp in Intermediate DC/DC Power Supplies
• H-Bridge High Side Switch for Lighting Application
Package with Small Size and Low 1.07 mm
Profile
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
stg
g
®
tested
G
Power MOSFET
P-Channel MOSFET
S
D
- 50 to 150
- 2.3
- 1.9
- 3.0
3.7
2.4
11.25
Limit
- 150
± 20
- 8.9
- 7.1
- 15
- 13
260
15
52
33
a, b
a, b
a, b
a, b
a, b
Vishay Siliconix
®
Si7115DN
www.vishay.com
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1

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SI7115DN Summary of contents

Page 1

... S 3. Bottom View Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7115DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... S-70943–Rev. A, 14-May-07 New Product 1700 1360 1020 680 = 10 V 340 2.2 1.9 1 100 1.0 0.7 0 Si7115DN Vishay Siliconix 2.0 1.6 1 125 °C C 0.8 0.4 25 ° °C 0 – Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si7115DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.00 0.3 0.6 0.9 – Source-to-Drain Voltage ( Source-Drain Diode Forward Voltage 1.0 0 250 µA D 0.4 0.1 - 0 – Temperature (°C) J Threshold Voltage 0.01 www.vishay.com 4 New Product 25 °C 1.2 1 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73864 S-70943–Rev. A, 14-May-07 New Product 100 T – Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 0 Si7115DN Vishay Siliconix 125 150 100 125 T – Case Temperature (°C) C Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7115DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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