SI7469DP Vishay, SI7469DP Datasheet

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SI7469DP

Manufacturer Part Number
SI7469DP
Description
P-channel 80-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73438
S-71596-Rev. B, 30-Jul-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
- 80
(V)
Ordering Information: Si7469DP-T1-E3 (Lead (Pb)-free)
8
6.15 mm
D
0.029 at V
0.025 at V
7
D
h
r
ttp://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
DS(on)
6
D
PowerPAK SO-8
GS
GS
5
Bottom View
(Ω)
D
= - 4.5 V
J
= - 10 V
= 150 °C)
b, f
1
S
P-Channel 80-V (D-S) MOSFET
2
S
3
I
D
- 28
- 28
S
(A)
5.15 mm
4
a
d, e
G
A
Q
= 25 °C, unless otherwise noted
Steady State
55 nC
L = 0.1 mH
g
T
T
T
T
T
T
T
T
T
T
t ≤ 10 sec
C
C
A
A
C
A
C
C
A
A
(Typ)
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJC
GS
G
DS
AS
D
S
D
stg
P-Channel MOSFET
®
S
D
Power MOSFET
Typical
1.2
19
- 55 to 150
- 10.2
- 8.1
- 4.3
5.2
3.3
Limit
- 28
- 28
- 28
± 20
- 80
- 40
- 45
100
260
83
53
b, c
b, c
b, c
b, c
a
a
b, c
a
Maximum
1.5
24
Vishay Siliconix
Si7469DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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SI7469DP Summary of contents

Page 1

... Bottom View Ordering Information: Si7469DP-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7469DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... New Product 3 V 2.0 2.5 3.0 8000 7000 6000 5000 4000 3000 2000 1000 2.1 1.9 1 1.5 1.3 1.1 0.9 0.7 0.5 80 100 120 Si7469DP Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si7469DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.4 2.2 2.0 1.8 1.6 1.4 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.05 0.04 0.03 0. °C J 0.01 0.8 1.0 1 250 µ 100 125 150 ...

Page 5

... Document Number: 73438 S-71596-Rev. B, 30-Jul-07 New Product 100 100 125 150 0.001 0.01 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi- Si7469DP Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 ...

Page 6

... Si7469DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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