MCH3412 Sanyo Semiconductor Corporation, MCH3412 Datasheet

MCH3412

Manufacturer Part Number

MCH3412

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.MCH3412.pdf (4 pages)

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Ordering number : ENN6901

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : KM

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

•

Low ON-resinstance.

Ultrahigh-speed switching.

4V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh-Speed Switching Applications

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =1mA, V GS =0

V DS =30V, V GS =0

V GS = 16V, V DS =0

V DS =10V, I D =1mA

V DS =10V, I D =1.5A

MCH3412

Conditions

Package Dimensions

unit : mm

2167

Conditions

0.3

0.65

2.0

0.8mm)

[MCH3412]

min

N-Channel Silicon MOSFET

1.2

2.1

13001 TS IM TA-3099

Ratings

0.15

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

typ

Ratings

MCH3412

--55 to +125

Continued on next page.

max

150

2.6

No.6901-1/4

Unit

Related parts for MCH3412

MCH3412 Summary of contents

Page 1

... Tstg Symbol Conditions V (BR)DSS I D =1mA DSS V DS =30V GSS 16V (off =10V =1mA yfs V DS =10V =1.5A N-Channel Silicon MOSFET MCH3412 [MCH3412] 0.3 0. 0.65 2 Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings 2 0.8mm) ...

Page 2

... See specified Test Circuit t d (off) See specified Test Circuit t f See specified Test Circuit =10V =10V =3A Qgs V DS =10V =10V =3A Qgd V DS =10V =10V = =3A =1. =10 V OUT MCH3412 S 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.6 0.7 0.8 0.9 1.0 IT02942 ...

Page 3

... =10V = Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature MCH3412 =10V 0.2 0.3 1.0 IT02946 1000 100 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. MCH3412 PS No.6901-4/4 ...

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