MCH6406 Sanyo Semiconductor Corporation, MCH6406 Datasheet
MCH6406
Manufacturer Part Number
MCH6406
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.MCH6406.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCH6406
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : EN7297A
MCH6406
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KF
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
•
•
Low ON-resistance.
4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS = 16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =2.5A
I D =2.5A, V GS =10V
I D =1.2A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
MCH6406
Conditions
O3105PE MS IM TB-00001872 / 83002 TS IM TA-100190
Conditions
2
0.8mm)
min
1.2
2.8
30
Ratings
typ
Ratings
460
37
63
95
75
11
12
32
18
4
Continued on next page.
--55 to +150
max
150
1.5
2.6
30
20
20
10
48
88
5
1
No.7297-1/4
Unit
Unit
m
m
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
S
C
C
A
A
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MCH6406 Summary of contents
Page 1
... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH6406 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...
Page 2
... I D =2. =1. IT05182 Ratings min typ max 8.5 1.8 1.3 0. =15V V IN 10V =2. PW= MCH6406 P =10V 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage (on --60 --40 -- ...
Page 3
... Drain Current =10V Total Gate Charge 2.0 1.5 1.0 0 100 Ambient Temperature MCH6406 0.001 0.2 1.0 IT05184 1000 V DD =15V 7 ...
Page 4
... Note on usage : Since the MCH6406 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...