OPE5164UR Roithner LaserTechnik GmbH, OPE5164UR Datasheet
OPE5164UR
Manufacturer Part Number
OPE5164UR
Description
Algainp Ultra Bright Red Led Lamp
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
1.OPE5164UR.pdf
(2 pages)
AlGaInP Ultra Bright Red LED LampC C C C
diode that is designed for ultra brightness and excellent
reliability. This device is optimized for efficiency at
peak wavelength 639nm.
This device is packaged T1
medium beam angle with lensed package and cup frame.
FEATURESC
• Ultra brightness
• Peak wavelength : 639nm
• Medium beam angle
• Excellent reliability
• Available for pulse operating
APPLICATIONSC
• PIXEL cluster
• LED Dot Matrix
• Traffic signal
• Display signboard
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
MAXIMUM RATINGSC C
ELECTRO-OPTICAL CHARACTERISTICS
C
C
C
1
2
The OPE5164UR is AlGaInP ultra bright light emitting
for this device.
.Duty ratio = 1/100, pulse width=0.1ms.
.Lead soldering temperature (2mm from case for 5sec.).
Luminous intensity
Peak emission wavelength
Spectral bandwidth
Forward voltage
Reverse current
Half angle
Power dissipation
Forward current
Pulse forward current
Reverse voltage
Operating temp.
Soldering temp.
Otherwise, it should be keeping in a damp proof box with desiccants.
Item
Item
C
CCCCCCCCCCCCCC 2
CCCCCC 1C
3/4
plastic package and has
Symbol
C
Topr.
Tsol.
V
P
I
I
FPC
FC
OPE5164UR
DC
RC
Symbol
V
CCCCCCCCCCCCCCCCC(Ta=25°C )
F
p
C
C
C
-25~ +85
5
Rating
260.
40
30
50
Conditions
4
I
I
I
I
I
V
F
F
F
F
F
=20 EC
=20 EC
=20 EC
=20 EC
=20 EC
R
=4VC
DIMENSIONS (Unit : mm)
Unit
Min.
°CC
°CC
2- 0.5
EC
EC
C
C
Tolerance : ±0.2mm
2400
Typ.
639
±10
2.0
20
Anode
Cathode
Max.
2.5
100
2.3
(Ta=25°C)
Unit
mcd
deg.
nm
nm
µA
V
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OPE5164UR Summary of contents
Page 1
... AlGaInP Ultra Bright Red LED LampC The OPE5164UR is AlGaInP ultra bright light emitting diode that is designed for ultra brightness and excellent reliability. This device is optimized for efficiency at peak wavelength 639nm. This device is packaged T1 plastic package and has 3/4 medium beam angle with lensed package and cup frame. ...
Page 2
... Forward Voltage V 8000 5000 2000 1000 60 80 100 I =20mA 100 Ta=25 -70 -80 -90 2.0 2.1. ( OPE5164UR LUMINOUS INTENSITY Vs. FORWARD CURRENT Ta=25 500 300 100 Forward Current I (mA) F RELATIVE LUMINOUS INTENSITY Vs. EMISSION WAVELENGTH. 1.0 Ta=25 0.8 0.6 0.4 0.2 0.0 500 550 600 650 700 Emission Wavelength p ( nm) RELATIVE LUMINOUS INTENSITY Vs ...