OPE5162UO Roithner LaserTechnik GmbH, OPE5162UO Datasheet

no-image

OPE5162UO

Manufacturer Part Number
OPE5162UO
Description
Algainp Ultra Bright Orange Led Lamp
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
AlGaInP Ultra Bright Orange LED LampC C C C
diode that is designed for ultra brightness and excellent
reliability. This device is optimized for efficiency at
peak wavelength 624nm.
This device is packaged T1
medium beam angle with lensed package and cup frame.
FEATURESC
• Ultra brightness
• Peak wavelength : 624nm
• Medium beam angle
• Excellent reliability
• Available for pulse operating
C
APPLICATIONSC
• PIXEL cluster
• LED Dot Matrix
• Traffic signal
• Display signboard
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
MAXIMUM RATINGSC C
ELECTRO-OPTICALCHARACTERISTICS
C
1
2
The OPE5162UO is AlGaInP ultra bright light emitting
for this device.
.Duty ratio = 1/100, pulse width=0.1ms.
.Lead soldering temperature (2mm from case for 5sec.).
Luminous intensity
Peak emission wavelength
Spectral bandwidth
Forward voltage
Reverse current
Half angle
Power dissipation
Forward current
Pulse forward current
Reverse voltage
Operating temp.
Soldering temp.
Otherwise, it should be keeping in a damp proof box with desiccants.
Item
Item
C
CCCCCCCCCCCCCC 2
CCCCCC 1C
3/4
plastic package and has
Symbol
C
Topr.
Tsol.
V
P
I
I
FPC
OPE5162UO
FC
DC
RC
Symbol
V
CCCCCCCCCCCCCCCCC(Ta=25°C )

F
p
C
C
C
-25~ +85
7
Rating
260.
40
30
50
4
Conditions
I
I
I
I
I
V
F
F
F
F
F
=20 EC
=20 EC
=20 EC
=20 EC
=20 EC
R
=4VC
DIMENSIONS (Unit : mm)
Unit
°CC
°CC
2- 0.5
Min.
EC
EC
C
C
Tolerance : ±0.2mm
3500
Typ.
±10
624
2.0
18
Anode
Cathode
Max.
2.5
100
2.4
(Ta=25°C)
Unit
mcd
deg.
nm
nm
µA
V

Related parts for OPE5162UO

OPE5162UO Summary of contents

Page 1

... AlGaInP Ultra Bright Orange LED LampC The OPE5162UO is AlGaInP ultra bright light emitting diode that is designed for ultra brightness and excellent reliability. This device is optimized for efficiency at peak wavelength 624nm. This device is packaged T1 plastic package and has 3/4 medium beam angle with lensed package and cup frame. ...

Page 2

... OPE5162UO LUMINOUS INTENSITY Vs. FORWARD CURRENT Ta=25 Forward Current I (mA) F RELATIVE LUMINOUS INTENSITY Vs. EMISSION WAVELENGTH. Ta=25 500 550 600 650 700 750 800 Emission Wavelength (nm) p RELATIVE LUMINOUS INTENSITY Vs ...

Related keywords