OPE5185PU Roithner LaserTechnik GmbH, OPE5185PU Datasheet
OPE5185PU
Manufacturer Part Number
OPE5185PU
Description
Ultra High Speed Gaalas Infrared Emitter
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
1.OPE5185PU.pdf
(2 pages)
Ultra High Speed GaAlAs Infrared Emitter C C C C
that is designed for high power, low forward voltage
and ultra high speed rise/fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package and has
narrow beam angle with lensed package and cup frame.
Especially this device is suited as the emitter of data
transmission without cable.
FEATURESC
• Ultra high speed;15ns rise timeC
• 850nm wavelength
• Narrow beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
C
APPLICATIONSC
• Emitter of IrDA
• IR Audio Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
MAXIMUM RATINGSC C
ELECTRO-OPTICALCHARACTERISTICS
*3
1
2
The OPE5185PU is GaAlAs infrared emitting diode
for this device.
.Duty ratio = 1/100, pulse width=0.1ms.
.Lead Soldering Temperature (2mm from case for 5sec.).
. 10logPo(fc MHz)/Po(0.1 MHz)=-3
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
Cut off frequency
Power Dissipation
Forward current
Pulse forward current
Reverse voltage
Operating temp.
Soldering temp.
Otherwise, it should be keeping in a damp proof box with desiccants.
Item
Item
CCCCCCCCCCCCCC 2
CC CCCC 1C
Symbol
C
*3
Topr.
Tsol.
I
V
P
I
FPC
FC
DC
RC
OPE5185PU
Symbol
tr/tf
V
Ct
I
Ie
fc
CCCCCCCCCCCCCCCCC(Ta=25°C )
R
F
p
C
C
C
C
-25~ +85
Rating
1
260.
150
100
1.0
4.0
I
Conditions
F
DD EC
I
I
I
I
I
I
V
F
f=1
F
F
F
F
F
=50 EC
=50 EC
=50 EC
=50 C
=50 C
=50 C
R
D ECEEC
=4VC
DIMENSIONS (Unit : mm)
C
C
C
Unit
2- 0.5
°CC
°CC
AC
Min.
EC
C
C
C
C
C
C
C
C
C
Tolerance : ±0.2mm
Anode
Cathode
Typ.
15/8
850
±10
1.5
20
90
40
24
C
2.5
Max.
2.0
10
C
C
C
C
C
C
(Ta=25°C)
Unit
deg.
MHz
µEC
ns
V
/
C
C
C
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OPE5185PU Summary of contents
Page 1
... Ultra High Speed GaAlAs Infrared Emitter The OPE5185PU is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and ultra high speed rise/fall time. This device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current ...
Page 2
... ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY -40° -50° -60° -70° -80° -90° 1.0 1.4 1.5 1.6 (V) 2 OPE5185PU 100 200 500 Forward Current IF(mA) 750 800 850 900 950 Emission Wavelength (nm) 0° 10° -10° 20° -20° 30° -30° 40° 0.5 0 0.5 Relative Radiant intensity Ta=25 50° ...