OPE5194 Roithner LaserTechnik GmbH, OPE5194 Datasheet

OPE5194

Manufacturer Part Number

OPE5194

Description

Gaas Infrared Emitter

Manufacturer

Roithner LaserTechnik GmbH

Datasheet

1.OPE5194.pdf (2 pages)

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GaAs Infrared Emitter C C C C

that is designed for low forward voltage and

high reliability. This device is optimized for efficiency

at emission wavelength 940nm and has a high radiant

efficiency over a wide range of forward current.

This device is packaged T1-

and has narrow beam angle with lensed package

and cup frame.

FEATURESC

• High-output powerC

• Narrow beam angle

• High reliability

• Available for pulse operating

• Low cost

APPLICATIONSC

• Optical emitters

• Optical switches

• Smoke sensors

• IR remote control

• IR sound transmission

STORAGE

• Condition : 5°C~35°C,R.H.60%

• Terms : within 3 months from production date

• Remark : Once the package is opened, the products should be used within a day.

* Please take proper steps in order to secure reliability and safety in required conditions and environments

MAXIMUM RATINGSC C

ELECTRO-OPTICALCHARACTERISTICS

The OPE5194 is GaAs infrared emitting diode

for this device.

.Duty ratio = 1/100, pulse width=0.1ms.

.Lead Soldering Temperature (2mm from case for 5sec.).

Forward voltage

Reverse current

Capacitance

Radiant intensity

Peak emission wavelength

Spectral bandwidth 50%

Half angle

Power Dissipation

Forward current

Pulse forward current

Reverse voltage

Operating temp.

Soldering temp.

Otherwise, it should be keeping in a damp proof box with desiccants.

Item

CCCCCCCCCCCCCCC 2

CCCCCC

3/4

plastic package

Symbol

Topr.

Tsol.

FPC

Symbol

OPE5194

CCCCCCCCCCCCCCCCC(Ta=25°C )

-25~ +85

Rating

260.

150

100

1.0

5.0

f = 1MHz

Conditions

=100mA

= 50mA

=100mA

= 5V

DIMENSIONS (Unit : mm)

Unit

°CC

2- 0.5

Min.

Tolerance : ±0.2mm

Typ.

940

±10

1.4

Anode

Cathode

2.5

Max.

1.7

(Ta=25°C)

mW/

Unit

deg.

µA

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OPE5194 Summary of contents

Page 1

... GaAs Infrared Emitter The OPE5194 is GaAs infrared emitting diode that is designed for low forward voltage and high reliability. This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1- ...

Page 2

... EMISSION WAVELENGTH. 1.0 I =50mA F 0.8 0.6 0.4 0.2 0 100 800 -50° -60° -70° -80° -90° 1.0 1.4 1.5 1.6 ( OPE5194 Ta=25 Ta= 100 200 500 Forward Current IF(mA) Ta=25 850 900 950 1000 1050 Emission Wavelength (nm) ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY 0° 10° -10° 20° -20° -30° -40° 0.5 0 0.5 Relative Radiant intensity Ta=25 30° ...

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