BB403M Renesas Electronics Corporation., BB403M Datasheet
BB403M
Related parts for BB403M
BB403M Summary of contents
Page 1
... High forward transfer admittance; (|yfs typ kHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4R (SOT-143 var.) Outline Notes: 1. Marking is “CX–”. 2. BB403M is individual type number of HITACHI BBFET. BB403M VHF/UHF RF Amplifier MPAK- ...
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... BB403M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage V Gate1 to source breakdown voltage Gate2 to source breakdown ...
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... RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns , |yfs|, Ciss, Coss, Crss, NF, PG) D(op Gate 2 Gate 1 Drain Source 1000p BBFET 47k L2 1000p R 470k G 1000p BB403M 1000p 47k Output(50 ) 1000p 10p max RFC 1SV70 Unit Resistance ( ) D G1 Capacitance (F) 3 ...
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... BB403M 900MHz Power Gain, Noise Test Circuit Input RFC Variable Capacitor (10pF MAX Disk Capacitor (1000pF) : Air Capacitor (1000pF) : 470 4.7 k L2: ...
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... Drain to Source Voltage V DS Typical Output Characteristics G2S 200 1 2 Drain to Source Voltage Drain Current vs. Gate1 to Source Voltage 4.0 8.0 Gate1 to Source Voltage (V) BB403M ( G2S 1.2 1.6 2.0 V (V) G1S 5 ...
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... BB403M Drain Current vs. Gate2 to Source Voltage 470 Gate2 to Source Voltage Drain Current vs. Gate1 Current Gate1 Current Drain Current vs. Gate1 Voltage G2S 470 k ...
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... G1 Forward Transfer Admittance vs. Drain Current 5 (V) Drain Current Power Gain vs. Gate Resistance G2S f = 200 MHz 10 5 0.1 0.2 0.5 Gate Resistance R BB403M G2S (mA ...
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... BB403M Noise Figure vs. Gate Resistance 200 MHz 0.1 0.2 0 Gate Resistance R G Noise Figure vs. Drain Current variable f = 200 MHz Drain Current Power Gain vs. Drain Current G2S ...
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... Power Gain vs. Drain Current Drain Current I Gain Reduction vs. Gate2 to Source Voltage Gate2 to Source Voltage V BB403M G2S R = variable 900 MHz (mA G2S ...
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... BB403M Gain Reduction vs. Gate2 to Source Voltage G2S 470 900 MHz Gate2 to Source Voltage V Input Capacitance vs. Gate2 to Source Voltage G2S R = 470 MHz Gate2 to Source Voltage V 10 Drain Current vs. Gate Resistance ...
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... S22 Parameter vs. Frequency . –.2 –30 –.4 –.6 –.8 Test Condition : G2S Zo = 1000 MHz (50 MHz step) BB403M Scale div –30 –60 – 470 1 1 – ...
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... BB403M Sparameter ( 5V S11 S21 f (MHz) MAG ANG MAG 50 0.947 –7.0 4.11 100 0.978 –11.9 4.13 150 0.973 –18.7 4.04 200 0.960 –23.8 4.01 250 0.956 –29.6 3.90 300 0.939 –35.5 3.85 350 0.930 –40.3 3.68 400 0.905 –45.7 3.63 450 0.889 –50.3 3.45 500 0.870 –55.6 3.35 550 0.855 – ...
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... Package Dimensions 2.95 0.2 1.9 0.2 0.95 0.95 + 0.1 0.4 – 0. 0.1 0.6 0.4 – 0.05 0.85 0.95 1.8 + 0.1 0.16 – 0.06 + 0.1 0.4 – 0. 0.1 + 0.1 – 0.05 BB403M Unit: mm Hitachi Code MPAK–4R — EIAJ JEDEC — 13 ...
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... BB403M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...