BU508AX NXP Semiconductors, BU508AX Datasheet

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BU508AX

Manufacturer Part Number
BU508AX
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in
horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
PINNING - SOT399
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
July 1998
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-hs
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
case
CONDITIONS
V
T
I
f = 16 kHz
I
CONDITIONS
V
T
CONDITIONS
without heatsink compound
with heatsink compound
in free air
1 2 3
C
Csat
hs
hs
1
BE
BE
= 4.5 A; I
= 0 V
= 0 V
= 4.5 A; f = 16kHz
25 ˚C
25 ˚C
B
= 1.6 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
-65
4.5
0.7
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1500
e
1500
c
BU508AX
700
700
150
150
1.0
3.7
2.8
15
45
15
45
8
8
4
6
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
K/W
˚C
˚C
W
W
V
V
A
A
V
A
V
V
A
A
A
A
s

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BU508AX Summary of contents

Page 1

... T 25 ˚ 4 1 kHz 16kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS without heatsink compound with heatsink compound in free air 1 Product specification BU508AX TYP. MAX. UNIT - 1500 V - 700 1 SYMBOL ...

Page 2

... 100 mA CONDITIONS I = 0.1 A 4.5 A;L 1 mH;C Csat 1 B(end 2. Product specification BU508AX MIN. TYP. MAX. - 2500 - 22 - MIN. TYP. MAX 1 2 700 - - - - 1 1 TYP. MAX 125 - = ...

Page 3

... VCEOsust . CEOsust ICsat h FE 100 t IBend 0.1 t Fig.6. Typical DC current gain Product specification BU508AX ICsat IBend - IBM Fig.4. Switching times definitions. + 150 v nominal adjust for ICsat 1mH LB D.U.T. 12nF Fig.5. Switching times test circuit . BU508AD ...

Page 4

... Fig.11. Normalised power dissipation. C BU508AD 4. Product specification BU508AX bu508ax 1.0E-05 1E-03 1.0E-01 1.0E f(t); parameter j-hs p Normalised Power Derating with heatsink compound ...

Page 5

... VCE / V = 25˚C Fig.13. Forward bias safe operating area Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted without heatsink compound and 30 the envelope. 5 Product specification BU508AX 0.01 ICM max IC max II Ptot max I 1000 1 10 100 VCE / V 5 newton force on the centre of ...

Page 6

... Net Mass: 5.88 g 4.5 27 max 22.5 max 18.1 min Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 16.0 max 0.7 10.0 25.1 25.7 5.1 2.2 max 4.5 1.1 0.4 M 5.45 5.45 6 Product specification BU508AX 5.8 max 3.0 3 0.95 max 3.3 Rev 1.200 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Product specification BU508AX Rev 1.200 ...

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