BU508AX NXP Semiconductors, BU508AX Datasheet - Page 4

• Manufacturer Part Number: BU508AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
July 1998
Silicon Diffused Power Transistor
Fig.7. Typical collector-emitter saturation voltage.
Fig.9. Typical collector-emitter saturation voltage.
Fig.8. Typical base-emitter saturation voltage.
0.9
0.7
0.5
0.3
0.1
0.8
0.6
0.4
0.2
1.4
1.2
0.8
0.6
0.1
10
1
1
0
1
0.1
0
0.1
VCESAT/V
VBESAT / V
VCESAT / V
IC = 4.5A
IC = 3A
V
V
V
CE
BE
CE
sat = f (I
sat = f (I
sat = f (I
1
IC = 6A
C
); parameter I
B
B
); parameter I
); parameter I
1
2
1
IB/A
3
C
IC = 4.5A
IC = 3A
IC = 6A
/I
C
C
IC / A
B
BU508AD
BU508AD
IB / A
BU508AD
10
10
4
4
0.001
120
110
100
0.01
90
80
70
60
50
40
30
20
10
0.1
1.0E-07
0
10
1
Fig.11. Normalised power dissipation.
Fig.10. Transient thermal impedance.
0
PD%
Zth K/W
0.05
0.02
0.5
0.2
0.1
Z
0
PD% = 100 P
th j-hs
20
1.0E-05
= f(t); parameter D = t
40
t / s
60
D
1E-03
Ths / C
/P
D 25˚C
P
80
D
Normalised Power Derating
with heatsink compound
t
= f (T
Product specification
p
100
T
1.0E-01
D =
p
hs
120
/T
BU508AX
)
t
T
bu508ax
p
t
Rev 1.200
1.0E+1
140