KSH13003 Fairchild Semiconductor, KSH13003 Datasheet

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KSH13003

Manufacturer Part Number
KSH13003
Description
High Voltage Power Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2000 Fairchild Semiconductor International
High Voltage Power Transistor
D-PACK for Surface Mount Applications
• High speed Switching
• Suitable for Switching Regulator Motor Control
• Straight Lead (I.PACK, I Suffix)
• Lead Formed for Surface Mount Applications (No Suffix)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width=5ms, Duty Cycle 10%
V
V
V
I
I
I
P
T
T
V
I
h
V
V
C
f
t
t
t
C
CP
B
EBO
T
ON
STG
F
FE
J
STG
CBO
CEO
EBO
C
Symbol
CEO
CE
BE
ob
Symbol
(sat)
(sat)
(sus)
* Collector-Emitter Breakdown Voltage
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Emitter Cut-off Current
Output Capacitance
Current Gain Bandwidth Product
Turn ON time
Storage time
Fall Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSH13003
I
V
V
V
I
I
I
I
I
V
V
V
I
C
C
C
C
C
C
B
EB
CE
CE
CB
CE
CC
1 = 0.2A, I
= 5mA, I
= 0.5A, I
= 1A, I
= 1.5A, I
= 0.5A, I
= 1A, I
= 9V, I
Test Condition
= 2V, I
= 2V, I
= 10V, f = 0.1MHz
= 10V, I
= 125V, I
B
B
C
= 0.25A
= 0.25A
B
C
C
B
B
B
C
B
= 0
= 0
= 0.1A
= 0.5A
= 0.1A
= 0.5A
= 1A
1
2 = - 0.2A
C
= 0.1A
= 1A
1.Base
D-PAK
Min.
400
2.Collector
8
5
4
- 65 ~ 150
Value
0.75
700
400
150
1.5
40
9
3
1
Typ.
21
3.Emitter
Max.
0.5
1.2
1.1
4.0
0.7
10
40
1
3
1
Rev. A, February 2000
I-PAK
Units
W
Units
V
V
V
A
A
A
MHz
C
C
pF
V
V
V
V
V
V
A
s
s
s

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KSH13003 Summary of contents

Page 1

... Current Gain Bandwidth Product T t Turn ON time ON t Storage time STG t Fall Time F * Pulse Test: Pulse Width=5ms, Duty Cycle 10% ©2000 Fairchild Semiconductor International KSH13003 1 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 5mA ...

Page 2

... BE(sat) V CE(sat) 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 I MAX. (PLUSE MAX.(DC 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 100 =0mA B 0.1 3.5 4.0 4.5 5 0.1 0. ...

Page 3

... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2000 Fairchild Semiconductor International D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. A, February 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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