ES6U42 ROHM Co. Ltd., ES6U42 Datasheet

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... Low voltage drive (2.5V drive). 4) Built-in Low V schottky barrier diode. F Applications Switching Package specifications Package Taping Type Code T2R Basic ordering unit (pieces) 8000 ES6U42 Absolute maximum ratings (Ta=25°C) <MOSFET> Parameter Symbol Drain-source voltage V DSS Gate-source voltage V GSS Continuous I D Drain current ...

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... ES6U42 Electrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. Gate-source leakage I GSS −20 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −0.7 Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward transfer admittance Y fs Input capacitance ...

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... ES6U42 Electrical characteristics curves <MOSFET> 2.0 Ta=25°C Pulsed V = -10V GS 1 -4. -4. -3. -2. -2.2V 0 -2.0V GS 0.0 0.0 0.2 0.4 0.6 0.8 DRAIN-SOURCE VOLTAGE : -V [V] DS Fig.1 Typical Output Characteristics(Ⅰ) 10000 Ta=25°C Pulsed V = -2. -4. -4.5V GS 1000 100 0.01 0.1 1 DRAIN-CURRENT : -I [A] D Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10000 ...

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... ES6U42 1000 Ta=25°C 900 Pulsed 800 700 I = -1.0A D 600 I = -0.5A D 500 400 300 200 100 GATE-SOURCE VOLTAGE : -V [V] GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 Ciss 100 Crss Coss 10 Ta=25°C f=1MHz V = 0.01 0 100 DRAIN-SOURCE VOLTAGE : -V ...

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... ES6U42 Measurement circuit D.U. Fig.1-1 Switching Time Measurement Circuit G(Const Fig.2-1 Gate Charge Measurement Circuit Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. ...

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Appendix No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the ...