SI2316DS Vishay, SI2316DS Datasheet
SI2316DS
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SI2316DS Summary of contents
Page 1
... Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71798 S-05481—Rev. A, 21-Jan-02 New Product I (A) D 3.4 2.6 TO-236 (SOT-23 Top View Si2316DS (C6)* *Marking Code = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C ...
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... Si2316DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... V – Source-to-Drain Voltage (V) SD Document Number: 71798 S-05481—Rev. A, 21-Jan-02 New Product 25_C J 1.0 1.2 1.4 Si2316DS Vishay Siliconix Capacitance 350 300 250 C iss 200 150 C oss 100 C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...
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... Si2316DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D –0.0 –0.2 –0.4 –0.6 –0.8 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com 4 New Product ...