SI4425BDY Vishay, SI4425BDY Datasheet

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SI4425BDY

Manufacturer Part Number
SI4425BDY
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
Document Number: 72000
S-50366—Rev. D, 28-Feb-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−30
−30
(V)
J
ti
t A bi
Ordering Information: Si4425BDY
0.019 @ V
0.012 @ V
J
J
a
a
G
S
S
S
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
1
2
3
4
GS
GS
a
a
= −4.5 V
= −10 V
Top View
(W)
P-Channel 30-V (D-S) MOSFET
SO-8
a
Si4425BDY—T1 (with Tape and Reel)
Si4425BDY—E3 (Lead (Pb)-Free)
Si4425BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
A
A
A
A
D
−11.4
−9.1
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density
APPLICATIONS
D Load Switches
Process
− Notebook PCs
− Desktop PCs
10 secs
Typical
G
−11.4
−9.1
−2.1
2.5
1.6
40
70
15
P-Channel MOSFET
−55 to 150
"20
−30
−50
S
D
Steady State
Maximum
Vishay Siliconix
−8.8
−7.0
−1.3
1.5
0.9
50
85
18
Si4425BDY
www.vishay.com
Unit
Unit
Available
_C/W
Pb-free
_C
C/W
W
W
V
V
A
A
1

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SI4425BDY Summary of contents

Page 1

... Document Number: 72000 S-50366—Rev. D, 28-Feb-05 I (A) D −11.4 −9 Si4425BDY—T1 (with Tape and Reel) Si4425BDY—E3 (Lead (Pb)-Free) Si4425BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel) = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C ...

Page 2

... Si4425BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72000 S-50366—Rev. D, 28-Feb-05 5000 4000 3000 2000 1000 25_C J 0.8 1.0 1.2 Si4425BDY Vishay Siliconix Capacitance C iss C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4425BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0 250 mA D 0.4 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C DS(on) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 100 125 150 Safe Operating Area ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. http://www.vishay.com/ppg?72000. Document Number: 72000 S-50366—Rev. D, 28-Feb-05 −2 − Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si4425BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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