SI1021R Vishay, SI1021R Datasheet

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SI1021R

Manufacturer Part Number
SI1021R
Description
P-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
b.
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
PRODUCT SUMMARY
FEATURES
D High-Side Switching
D Low On-Resistance: 4 Ω
D Low Threshold: –2 V (typ)
D Fast Switching Speed: 20 ns (typ)
D Low Input Capacitance: 20 pF (typ)
D Miniature Package
D Gate-Source ESD Protection
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulse Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
V
(BR)DSS(min)
Surface mounted on FR4 board.
Pulse width limited by maximum junction temperature.
–60
a
(V)
b
4 @ V
J
r
= 150_C)
DS(on)
a
Parameter
GS
_
= –10 V
(W)
a
P-Channel 60-V (D-S) MOSFET
V
–1 to –3.0
GS(th)
BENEFITS
D Ease in Driving Switches
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Easily Driven Without Buffer
D Small Board Area
A
(V)
= 25_C UNLESS OTHERWISE NOTED)
G
T
S
T
T
T
A
A
A
A
= 25_C
= 25_C
= 85_C
= 85_C
New Product
1
2
I
D
–190
(mA)
(SOT-416)
Top View
SC-75A
Symbol
T
R
J
3
V
V
I
P
, T
I
DM
thJA
GS
DS
D
D
stg
D
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid-State Relays
Displays, Memories, Transistors, etc.
Marking Code: F
–55 to 150
Limit
"20
–190
–135
–650
–60
250
130
500
Vishay Siliconix
Si1021R
www.vishay.com
Unit
_C/W
mW
mA
_C
V
1

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SI1021R Summary of contents

Page 1

... 25_C 85_C A R thJA stg Si1021R Vishay Siliconix APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply Converter Circuits D Solid-State Relays Marking Code: F Limit Unit –60 "20 –190 –135 mA –650 ...

Page 2

... Si1021R Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Drain-Source Breakdown Voltage V Gate-Threshold Voltage V Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance r a Forward Transconductance a Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Total Gate Charge (nC) g Document Number: 71410 S-21120—Rev. C, 01-Jul-02 New Product 800 1000 1.5 1.8 Si1021R Vishay Siliconix Transfer Characteristics 1200 T = –55_C J 900 125_C 600 300 – Gate-to-Source Voltage (V) GS ...

Page 4

... Si1021R Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 100 T = 125_C 0.00 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage Variance Over Temperature 0.5 0.4 = 250 0.3 0.2 0.1 –0.0 –0.1 –0.2 –0.3 –50 – – Junction Temperature (_C) ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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