SI1026X Vishay, SI1026X Datasheet

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SI1026X

Manufacturer Part Number
SI1026X
Description
N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SI1026X-T1-GE3
Manufacturer:
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VISHAY
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Part Number:
SI1026X-T1-GE3
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Quantity:
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Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71434
S-80643-Rev. C, 24-Mar-08
G
D
S
PRODUCT SUMMARY
Ordering Information: Si1026X-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
1
1
2
V
(BR)DSS(min)
1
2
3
60
Top View
SC-89
(V)
b
1.40 at V
Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
5
4
R
DS(on)
D
G
S
J
a
2
1
2
= 150 °C)
GS
(Ω)
= 10 V
N-Channel 60-V (D-S) MOSFET
a
V
GS(th)
1 to 2.5
Marking Code: E
a
(V)
A
= 25 °C, unless otherwise noted
I
D
T
T
T
T
500
(mA)
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free Option Available
• Low On-Resistance: 1.40 Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 15 ns (typ.)
• Low Input and Output Leakage
• ESD Protected: 2000 V
• Miniature Package
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Error Voltage
• Small Board Area
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Solid-State Relays
Symbol
T
Memories, Transistors, etc.
J
ESD
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
320
230
450
280
145
5 s
- 55 to 150
- 650
2000
± 20
60
Steady State
305
220
380
250
130
Vishay Siliconix
Si1026X
www.vishay.com
Unit
mW
mA
°C
V
V
RoHS
COMPLIANT
1

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SI1026X Summary of contents

Page 1

... Top View Ordering Information: Si1026X-T1-E3 (Lead (Pb)-free) Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si1026X Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Drain-Source Breakdown Voltage (BR)DSS V Gate Threshold Voltage GS(th) I Gate-Body Leakage I Zero Gate Voltage Drain Current a I On-State Drain Current D(on Drain-Source On-Resistance DS(on) a Forward Transconductance a V Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71434 S-80643-Rev. C, 24-Mar- 600 800 1000 0.4 0.5 0.6 Si1026X Vishay Siliconix 1200 °C J 900 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si1026X Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 T = 125 ° 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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