SI3433BDV Vishay, SI3433BDV Datasheet

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SI3433BDV

Manufacturer Part Number
SI3433BDV
Description
P-channel 1.8-v G-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3433BDV
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SI3433BDV-T1
Manufacturer:
TI
Quantity:
1 800
Part Number:
SI3433BDV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI3433BDV-T1-E3
Quantity:
142 500
Part Number:
SI3433BDV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72027
S-40575—Rev. C, 29-Mar-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−20
(V)
J
Ordering Information: Si3433BDV-T1
Marking Code:
ti
3 mm
t A bi
0.057 @ V
0.080 @ V
0.042 @ V
J
J
a
a
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
Si3433BDV-T1—E3 (Lead Free)
B3xxx
1
2
3
Top View
TSOP-6
2.85 mm
GS
GS
GS
a
a
= −2.5 V
= −1.8 V
= −4.5 V
P-Channel 1.8-V (G-S) MOSFET
(W)
6
5
4
a
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 5 sec
I
A
A
A
A
D
−5.6
−4.8
−4.1
= 25_C
= 85_C
= 25_C
= 85_C
(A)
(3) G
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
P-Channel MOSFET
(1, 2, 5, 6) D
(4) S
Typical
5 secs
−5.6
−4.1
−1.7
2.0
1.0
50
90
35
−55 to 150
−20
−20
"8
Steady State
Maximum
Vishay Siliconix
−4.3
−3.1
−0.9
1.1
0.6
110
60
42
Si3433BDV
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI3433BDV Summary of contents

Page 1

... V = −2 0.080 @ V = −1 TSOP-6 Top View 2.85 mm Ordering Information: Si3433BDV-T1 Si3433BDV-T1—E3 (Lead Free) Marking Code: B3xxx ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Si3433BDV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72027 S-40575—Rev. C, 29-Mar-04 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si3433BDV Vishay Siliconix Capacitance C iss 500 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 ...

Page 4

... Si3433BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 100 125 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72027 S-40575—Rev. C, 29-Mar-04 −2 − Square Wave Pulse Duration (sec) Si3433BDV Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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