VMZ6.8N ROHM Co. Ltd., VMZ6.8N Datasheet

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VMZ6.8N

Manufacturer Part Number
VMZ6.8N
Description
Zener Diode
Manufacturer
ROHM Co. Ltd.
Datasheet

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Diodes
Zener diode
VMZ6.8N
Constant voltage control.
1) Ultra small mold type. (VMD3)
2) High reliability.
Silicon epitaxial planar.
Z
Reverse curr
P
Junct
Storage temperature
(*1) Total of 2 elements
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
ener voltage
ower dissipation (*1)
ion temperature
Parameter
Parameter
ent
Symbol
Symbol
Tstg
V
I
Tj
P
R
Z
0.22±0.05
ROHM : VMD3
External dimensions (Unit : mm)
Taping specifications (Unit : mm)
0.32±0.05
dot (year week factory)
6.47
Min.
-
0.4
1.3±0.05
    0
(1)
4.0±0.07
1.2±0.1
-55 to +150
0.22±0.05
0.4
Limits
(2)
150
150
(3)
Typ.
2.0±0.04
-
-
Max.
7.14
0.50
(4.0±0.1)
0.5±0.05
0.13±0.05
φ1.55±0.05
0~0.1
m
Unit
Unit
µA
V
2.0±0.05
W
Land size figure (Unit : mm)
Structure
φ0.5±0.05
VMD3
I
V
Z
=5mA
R
=3.5V
0.4
0.4
Conditions
0.5
0.8
Rev.A
0.3±0.1
0.6±0.05
VMZ6.8N
0
1/2

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VMZ6.8N Summary of contents

Page 1

... Limits 150 P 150 Tj -55 to +150 Min. Typ. Max. V 6. 0.50 R VMZ6.8N Land size figure (Unit : mm) 0.8 0.5 0.4 0~0.1 0.4 VMD3 Structure 0.3±0.1 φ0.5±0.05 0.6±0.05 2.0±0.05 0 Unit m W ℃ ℃ Conditions Unit I =5mA =3.5V µ ...

Page 2

... AVE:0.0143nA 0.04 0. DISRESION MAP 1000 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=10mA IF=100mA time 1ms 300us 10 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS VMZ6.8N 100 f=1MHz REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 19.5 19 18.5 18 17.5 17 16.5 16 AVE:19.06pF 15 DISRESION MAP 1000 Rev.A ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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