TPC8124 TOSHIBA Semiconductor CORPORATION, TPC8124 Datasheet

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TPC8124

Manufacturer Part Number
TPC8124
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Lithium Ion Battery Applications
Power Management Switch Applications
Absolute Maximum Ratings
Small footprint due to small and thin package
Low drain-source ON-resistance: R
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (t = 10 s)
Drain power dissipation (t = 10 s)
Single pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature range
Note 1, Note 2, Note 3 : See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
GS
DC
Pulse (Note 1)
= 20 kΩ)
DSS
th
(Note 2a)
(Note 2b)
= −0.8 to −2.0 V (V
(Note 1)
(Note 3)
(Note 1)
= −10 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
AS
stg
D
ch
D
D
TPC8124
= 6.1 mΩ (typ.)
DS
DS
= −10 V, I
= −40 V)
−55 to 150
−25/+20
Rating
−40
−40
−12
−48
134
−12
150
1.9
1.0
1
D
= −0.5mA)
Unit
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
2-6J1B
6
3
2009-11-16
TPC8124
5
4
Unit: mm

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TPC8124 Summary of contents

Page 1

... V V DGR −25/+ GSS − − 134 mJ AS − 150 °C ch −55 to 150 T °C stg 1 TPC8124 Unit: mm ⎯ JEDEC ⎯ JEITA TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 2009-11-16 ...

Page 2

... January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) Part No. (or abbreviation code) Lot No. Note 5 (b)Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPC8124 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) = − 2009-11-16 ...

Page 3

... − gs1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = − DSF TPC8124 Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ − −40 ⎯ ⎯ (Note 6) −30 ⎯ ⎯ −0.8 ⎯ −2.0 ⎯ ...

Page 4

... Drain-source voltage V −0.4 −0.3 −0.2 −0.1 −3 0 −4 0 Gate−source voltage V −100 4 TPC8124 I – Common source −2.8 −3.2 −2 25°C Pulse test −2.5 −2.4 −2.3 −2.2 −2 −2.0 V −0.8 −1.2 −1.6 −2 ...

Page 5

... − −0.5mA Pulse test 0 −100 −80 −40 (V) Ambient temperature Ta ( − −32 V − −20 −16 −10 −8 0 160 0 C) ° 5 TPC8124 I – −4.5 −3 − Common source Ta = 25°C Pulse test 0.4 0.6 0.8 1 1.2 ( – ...

Page 6

... Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max −0.1 −0.1 −1 −10 Drain−source voltage V DS − 0 Pulse width t (s) w −100 (V) 6 TPC8124 (2) (1) Single pulse 100 1000 2009-11-16 ...

Page 7

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8124 2009-11-16 ...

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