SBE803 Sanyo Semiconductor Corporation, SBE803 Datasheet

SBE803

Manufacturer Part Number

SBE803

Description

Schottky Barrier Diode

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBE803.pdf (3 pages)

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Ordering number : ENN6331A

SBE803

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C (Value per element)

Electrical Characteristics at Ta=25 C (Value per element)

Marking : SB

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

•

High frequency rectification (switching regulators, converters, choppers).

Low forward voltage (V F max=0.7V).

Fast reverse recovery time (t rr max=10ns).

Low switching noise.

Low leakage current and high reliability due to highly reliable planar structure.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Schottky Barrier Diode

90V, 200mA Rectifier

Symbol

Rth(j-a)

V RRM

V RSM

I FSM

Tstg

V R

V F

T rr

I O

I R

50Hz sine wave,1 cycle

I R =200 A

I F =200mA

V R =45V

V R =10V,f=1MHz

I F =I R =100mA,See specified Test Circuit.

Mounted on a ceramic board

(600mm

SBE803

0.8mm)

Conditions

32505TN (PC)/O0899GI (KT)

min

Ratings

typ

Ratings

--55 to +125

max

200

110

0.7

No.6331-1/3

Unit

C/W

Related parts for SBE803

SBE803 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBE803 Schottky Barrier Diode 90V, 200mA Rectifier Symbol Conditions ...

Page 2

... No Contact 5 : Anode Top view 0.001 0 0.2 0.4 0.6 Forward Voltage SBE803 1 : Cathode 2 : Cathode 3 : Anode Contact 5 : Anode SANYO : CPH5 t rr Specified Test Circuit Duty 0.001 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. SBE803 100 ...

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