HN2D01FU TOSHIBA Semiconductor CORPORATION, HN2D01FU Datasheet

no-image

HN2D01FU

Manufacturer Part Number
HN2D01FU
Description
Toshiba Diode Silicon Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HN2D01FU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
HN2D01FU
Manufacturer:
TOSHIBA
Quantity:
2 600
Company:
Part Number:
HN2D01FU
Quantity:
3 000
Part Number:
HN2D01FU(TE85L)
Manufacturer:
TOSHIBA
Quantity:
3 869
Part Number:
HN2D01FU(TE85L)
Manufacturer:
TOSHIBA
Quantity:
370
Ultra High Speed Switching Application
l HN2D01FU is composed of 3 independent diodes.
l Low forward voltage
l Fast reverse recovery time : t
l Small total capacitance
Pin Assignment
Maximum Ratings
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
· The information contained herein is subject to change without notice.
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
*
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
: This is maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes,
the maximum ratings per diodes is 75  of the single diode one.
Characteristic
(Top View)
(Ta
=
: V
: C
rr
25° ° ° ° C)
TOSHIBA Diode Silicon Epitaxial Planar Type
F (3)
T
= 1.6ns (typ.)
= 0.5pF (typ.)
= 0.98V (typ.)
Symbol
HN2D01FU
V
I
T
I
FSM
V
FM
I
T
RM
P
stg
O
R
j
Marking
−55~125
Rating
240 *
80 *
200
125
1 *
85
80
Unit
mW
mA
mA
°C
°C
V
V
A
JEDEC
EIAJ
TOSHIBA
Weight: 6.2mg
2001-02-08 1/3
1-2T1C
HN2D01FU
Unit in mm
000707EAA1

Related parts for HN2D01FU

HN2D01FU Summary of contents

Page 1

... TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application l HN2D01FU is composed of 3 independent diodes. l Low forward voltage : V F (3) l Fast reverse recovery time : Small total capacitance : C T Pin Assignment (Top View) 25° ° ° ° C) Maximum Ratings = (Ta Characteristic ...

Page 2

... I = 100mA F ( ― 30V R ( ― 80V R ( ― 1MH ― 10mA (Fig.1) F Test Circuit ( HN2D01FU Min Typ. Max ― 0.62 ― ― 0.75 ― ― 0.98 1.20 ― ― 0.1 ― ― 0.5 ― 0.5 3.0 z ― 1.6 4.0 2001-02-08 2/3 Unit V µ ...

Page 3

... Q1, Q2, Q3 Common Q1, Q2, Q3 Common HN2D01FU Q1, Q2, Q3 Common 2001-02-08 3/3 ...

Related keywords