NSF2250WT1 ON Semiconductor, NSF2250WT1 Datasheet

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NSF2250WT1

Manufacturer Part Number
NSF2250WT1
Description
Npn Transistor Silicon Oscillator And Mixer Transistor
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
NSF2250WT1
Manufacturer:
ON Semiconductor
Quantity:
1 700
NSF2250WT1
NPN Silicon Oscillator and
Mixer Transistor
intended for use in general purpose UHF oscillator and mixer
applications. It is suitable for automotive keyless entry and TV tuner
designs.
during changes in the supply voltage and over the ambient temperature
range.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Electrostatic Discharge
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature
Range
The NSF2250WT1 NPN silicon epitaxial bipolar transistor is
The device features stable oscillation and small frequency drift
A
High Gain Bandwidth Product: f
Tightly Controlled h
Low Feedback Capacitance: C
Pb−Free Package is Available
= 25°C
Characteristic
Rating
FE
Range: h
RE
FE
T
= 0.45 pF Typical
= 2000 MHz Minimum
= 120 to 250
Symbol
Symbol
T
VE
V
V
ESD
R
R
J
P
CBO
CEO
, T
I
qJA
qJL
C
BO
D
stg
202 (Note 1)
310 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
−55 to +150
1.6 (Note 1)
2.5 (Note 2)
HBM − Class 1C
Value
MM − Class A
Max
3.0
30
15
50
1
mW/°C
Units
°C/W
°C/W
Unit
mW
mA
°C
V
V
V
†For information on tape and reel specifications,
NSF2250WT1
NSF2250WT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation may vary depending upon
manufacturing location.
Device
(Note: Microdot may be in either location)
ORDERING INFORMATION
3M = Specific Device Code
M
G
BASE
MARKING DIAGRAM
http://onsemi.com
1
= Date Code*
= Pb−Free Package
SOT−323/SC−70
1
(Pb−Free)
CASE 419
SOT−323
SOT−323
Package
1
STYLE 3
COLLECTOR
3M M G
Publication Order Number:
EMITTER
G
3
2
3000/Tape & Reel
3000/Tape & Reel
NSF2250WT1/D
Shipping

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NSF2250WT1 Summary of contents

Page 1

... NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range ...

Page 2

... −5.0 mA 31.9 MHz CE E Feedback Capacitance mA 1.0 MHz CB E 350 300 250 200 150 100 50 0 −50 NSF2250WT1 = 25°C) A Symbol 403°C/W qJA 0 50 100 T , AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve http://onsemi.com 2 Min Typ Max ...

Page 3

... Figure 2. DC Current Gain versus Collector Current 10,000 1000 100 0 COLLECTOR CURRENT (mA) C Figure 4. Gain Bandwidth Product versus Collector Current 1.6 1.4 1.2 1 0.8 0.6 0.4 0 NSF2250WT1 350 300 = 250 200 5 V 150 3 V 100 100 0.1 Figure 3. DC Current Gain versus Collector ...

Page 4

... NSF2250WT1 (T = 25°C) A S21 S12 Mag Ang Mag 6.803 162.639 0.018 6.224 148.649 0.034 5.033 126.317 0.058 4.072 110.981 0.074 3 ...

Page 5

... NSF2250WT1 (T = 25°C) A S21 S12 Mag Ang Mag 15.384 140.063 0.015 11.650 121.580 0.024 7.214 104.714 0.040 5.260 96.934 ...

Page 6

... Figure 7. Input Reflection Coefficient S22 j50 j25 j10 100 3 GHz −j10 −j25 −j50 Figure 9. Output Reflection Coefficient NSF2250WT1 S12 120° j100 150° 0 180° 0.05 GHz −150° −j100 −120° Figure 8. Reverse Transmission Coefficient S21 120° ...

Page 7

... Figure 11. Input Reflection Coefficient S22 j50 j25 j10 100 3 GHz −j10 −j25 −j50 Figure 13. Output Reflection Coefficient NSF2250WT1 S12 120° j100 150° 0 180° 0.05 GHz −150° −j100 −120° Figure 12. Reverse Transmission Coefficient S21 120° ...

Page 8

... NSF2250WT1 (T = 25°C) A S21 S12 Mag Ang Mag 1.6218 −3.3808 0.003 1.6153 −6.8404 0.008 1.6042 −13.205 0.014 1.5630 −26.289 ...

Page 9

... Figure 15. Input Reflection Coefficient S22 j50 j25 j10 100 −j10 −j25 2 GHz −j50 Figure 17. Output Reflection Coefficient NSF2250WT1 S12 120° j100 150° 0 180° −150° −j100 −120° Figure 16. Reverse Transmission Coefficient S21 120° ...

Page 10

... BSC e1 L 0.425 REF 0.017 REF H 2.00 2.10 2.40 0.079 0.083 E PIN 1. BASE 2. EMITTER 3. COLLECTOR mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NSF2250WT1/D MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 ...

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