MA746 Panasonic Corporation of North America, MA746 Datasheet
MA746
Manufacturer Part Number
MA746
Description
Silicon Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA746.pdf
(3 pages)
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Schottky Barrier Diodes (SBD)
MA4X746
Silicon epitaxial planar type
For super high speed switching
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * 1: Value per chip
I Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
O
Publication date: August 2001
• Two isolated elements are contained in one package, allowing
• I
• Optimum for high frequency rectification because of its short
• Low forward voltage V
• Mini type 4-pin package
Reverse voltage (DC)
Repetitive peak reverse-voltage
Non-repetitive peak Single
forward-surge-current
Peak forward
current
Average forward
current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
high-density mounting
reverse recovery time (t
F(AV)
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2. Rated input/output frequency: 2 GHz
and the leakage of current from the operating equipment.
= 200 mA and V
Parameter
Parameter
Pulse Generator
(PG-10N)
R
s
= 50 Ω
*2
Bias Application Unit N-50BU
Double
Double
Single
Double
Single
*
A
R
F
rr
< 50 V are achieved
and good rectification efficiency
* 1
* 1
* 1
)
(MA746)
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
Symbol
V
I
I
F(AV)
T
I
V
FSM
RRM
T
FM
stg
R
a
j
Symbol
= 25°C
V
V
I
C
t
a
R
rr
F1
F2
t
= 25°C
−55 to +150
Rating
0.75
300
225
200
150
150
3. * : t
50
50
1
V
I
I
V
I
I
F
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
V
R
R
R
= 30 mA
= 200 mA
= I
= 10 mA, R
SKH00107AED
rr
= 50 V
= 0 V, f = 1 MHz
measuring instrument
R
t
r
Input Pulse
10%
t
t
δ = 0.05
= 100 mA
p
r
90%
= 0.35 ns
= 2 µs
t
p
Unit
mA
mA
°C
°C
V
V
A
Conditions
L
= 100 Ω
t
I
F
I
I
R
F
R
Output Pulse
L
= 100 mA
= 100 mA
= 100 Ω
Marking Symbol: M3M
Internal Connection
0.60
I
t
rr
rr
= 10 mA
(0.2)
+0.10
–0.05
10°
t
(0.95)
2.90
3
1.9
2
Min
±0.2
+0.02
–0.05
(0.95)
2
3
0.5R
Typ
3.0
30
4
1
4
1
Mini4-G1 Package
Max
0.36
0.55
200
0.16
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
EIAJ : SC-61
+0.1
–0.06
Unit: mm
Unit
µA
pF
ns
V
1
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MA746 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA4X746 (MA746) Silicon epitaxial planar type For super high speed switching For small current rectification I Features • Two isolated elements are contained in one package, allowing high-density mounting • 200 mA and V < are achieved F(AV) R • Optimum for high frequency rectification because of its short ...
Page 2
MA4X746 −20°C = 150° 100°C 10 25°C 1 −1 10 − 0.1 0.2 0.3 0.4 0.5 0 Forward voltage V F ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...