MA738 Panasonic Corporation of North America, MA738 Datasheet
MA738
Manufacturer Part Number
MA738
Description
Schottky Barrier Diodes Sbd
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA738.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MA738-(TX)
Manufacturer:
ON
Quantity:
12 000
Schottky Barrier Diodes (SBD)
MA2Q738
Silicon epitaxial planar type
For high frequency rectification
I Features
I Absolute Maximum Ratings T
Note) * 1: With a printed circuit board (copper foil area 2.5 mm × 2.5 mm
I Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
O
Publication date: August 2001
• I
• V
• Automatic insertion with the emboss taping is possible
• New Mini-power 2-pin package
Reverse voltage (DC)
Repetitive peak reverse-voltage
Average forward current
Non-repetitive peak forward-
surge-current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
F(AV)
R
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2. Rated input/output frequency: 20 MHz
3. * : t
= 40 V is guaranteed
and the leakage of current from the operating equipment.
= 1.5 A rectification is possible
+ 0.8 mm × 20 mm or more on both cathode and anode sides)
Parameter
rr
Parameter
measuring instrument
*2
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit N-50BU
*
*1
A
(MA738)
Symbol
V
I
Wave Form Analyzer
(SAS-8130)
R
I
F(AV)
T
V
FSM
RRM
T
i
stg
= 50 Ω
R
a
j
Symbol
= 25°C
V
I
C
t
a
R
rr
F
t
= 25°C
−40 to +125
−40 to +125
Rating
1.5
40
40
60
V
I
V
I
I
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
R
R
= 2 A
= I
= 10 mA, R
SKH00021AED
= 40 V
= 10 V, f = 1 MHz
R
= 100 mA
V
Unit
°C
°C
V
V
A
A
R
Conditions
L
= 100 Ω
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: PD
t
1.4
±0.2
8°
I
F
2.5
I
I
R
F
R
Output Pulse
L
±0.3
= 100 mA
= 100 mA
Min
= 100 Ω
2
1
I
t
rr
rr
= 10 mA
Typ
70
t
NMiniP2-J1 Package
0.25
Max
0.55
2.15
50
2
+0.1
–0.05
±0.3
1 : Anode
2 : Cathode
Unit: mm
Unit
mA
pF
ns
V
1
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MA738 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA2Q738 (MA738) Silicon epitaxial planar type For high frequency rectification I Features • 1.5 A rectification is possible F(AV) • guaranteed R • Automatic insertion with the emboss taping is possible • New Mini-power 2-pin package I Absolute Maximum Ratings T Parameter Symbol ...
Page 2
MA2Q738 F(AV 0.8 2.5 2.0 20 2.5 (2) 1.5 (1) 1.0 0 100 150 (°C) Ambient temperature T a (1) Printed circuit board: Glass epoxy board (2) Printed circuit board: Alumina ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...