TF202C Sanyo Semiconductor Corporation, TF202C Datasheet

no-image

TF202C

Manufacturer Part Number
TF202C
Description
N-channel Silicon Junction Fet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TF202C-E4-TL-H
Manufacturer:
SANYO
Quantity:
19 199
Part Number:
TF202C-E5-TL-E
Manufacturer:
SANYO
Quantity:
47 000
Part Number:
TF202C-E5-TL-H
Manufacturer:
SANYO
Quantity:
16 171
Ordering number : ENA0727
TF202C
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking: E
* : The TF202C is classified by I DSS as follows : (unit : µA)
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Ultrasmall package permitting applied sets to be small and slim.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Rank
I DSS
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
140 to 240
E4
N-channel Silicon Junction FET
Electret Condenser Microphone
Applications
210 to 350
V (BR)GDO
V GS(off)
E5
Symbol
Symbol
V GDO
I DSS
Tstg
P D
I G
I D
Tj
SANYO Semiconductors
I G =- -100µA
V DS =5V, I D =1µA
V DS =5V, V GS =0V
TF202C
Conditions
Conditions
DATA SHEET
31407GB TI IM TC-00000549
min
140*
--0.2
--20
Ratings
typ
Ratings
--0.6
Continued on next page.
--55 to +150
max
350*
100
150
--1.2
--20
10
No. A0727-1/5
1
Unit
mW
Unit
mA
mA
µA
°C
°C
V
V
V

Related parts for TF202C

TF202C Summary of contents

Page 1

... Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Marking The TF202C is classified by I DSS as follows : (unit : µA) Rank E4 I DSS 140 to 240 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...

Page 2

... Drain-to-Source Voltage TF202C Symbol Conditions  yfs  =5V =0V, f=1kHz Ciss V DS =5V =0V, f=1MHz Crss V DS =5V =0V, f=1MHz =10mV, f=1kHz ∆ =10mV, f=1kHz =4.5→1.5V ∆ ...

Page 3

... Drain Current, I DSS -- THD -- V IN 100 THD : V CC =4.5V I DSS : V DS =5.0V 10 1.0 0 100 Input Voltage Ciss -- 1 1.0 Drain-to-Source Voltage TF202C 400 V DS =5V 360 320 280 240 200 160 120 --0.1 0 --1.0 IT02312 --0.70 --0.65 --0.60 --0.55 --0.50 --0.45 --0.40 --0.35 --0.30 400 500 ...

Page 4

... Drain Current, I DSS -- µ DSS 960 =4.5V 950 I DSS : V DS =5.0V 940 930 920 910 900 0 100 200 300 Drain Current, I DSS -- µ TF202C --0.5 --0.7 --0.9 --1.1 --1.3 --1.5 --1.7 400 500 0 A IT02320 =30mV f=1MHz 400 500 ...

Page 5

... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2007. Specifications and information herein are subject to change without notice. TF202C PS No. A0727-5/5 ...

Related keywords