SIA411DJ Vishay, SIA411DJ Datasheet

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SIA411DJ

Manufacturer Part Number
SIA411DJ
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA411DJ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
43 490
Part Number:
SIA411DJ-T1-E3
Manufacturer:
ST
Quantity:
446
Part Number:
SIA411DJ-T1-GE3
Manufacturer:
VISHAY
Quantity:
29 794
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 74464
S-80435-Rev. C, 03-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 20
(V)
2.05 mm
6
PowerPAK SC-70-6L-Single
D
5
0.030 at V
0.041 at V
0.056 at V
0.150 at V
D
4
S
h
R
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
1
S
GS
GS
GS
GS
D
2.05 mm
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
J
2
= 150 °C)
b, f
G
3
P-Channel 20-V (D-S) MOSFET
Ordering Information: SiA411DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
- 12
- 12
- 12
D
- 2
(A)
a
a
a
d, e
A
= 25 °C, unless otherwise noted
Q
Part # code
Steady State
15 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Marking Code
B E X
X X X
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch, PA Switch and Battery Switch for Portable
Symbol
Symbol
T
R
R
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Devices
J
V
V
I
P
, T
DM
I
I
thJC
thJA
GS
DS
D
S
D
Lot Traceability
and Date code
stg
®
Power MOSFET
Typical
5.3
28
- 55 to 150
- 8.8
- 2.9
3.5
2.2
Limit
- 7
- 12
- 12
- 12
- 20
- 20
260
± 8
19
12
b, c
b, c
b, c
b, c
b, c
a
a
a
Maximum
6.5
36
Vishay Siliconix
G
P-Channel MOSFET
®
SiA411DJ
www.vishay.com
D
S
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SIA411DJ Summary of contents

Page 1

... Low On-Resistance - 2 APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices Marking Code Part # code Lot Traceability and Date code Ordering Information: SiA411DJ-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ...

Page 2

... SiA411DJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... New Product thru 1 1.5 2.0 2100 1800 1500 1200 900 600 300 SiA411DJ Vishay Siliconix 125 ° ° 0.0 0.3 0.6 0 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss 0 ...

Page 4

... SiA411DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0.3 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.12 0.09 0. °C J 0.03 0.00 0.8 1.0 1 100 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74464 S-80435-Rev. C, 03-Mar-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA411DJ Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www.vishay.com 5 ...

Page 6

... SiA411DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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