SIA814DJ Vishay, SIA814DJ Datasheet
SIA814DJ
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SIA814DJ Summary of contents
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... D 0. 2. Ordering Information: SiA814DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) ...
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... SiA814DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Case (Drain) (Schottky) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board ttp://www.vishay.com/ppg?73257). The PowerPAK SC- leadless package. The end of the lead terminal is exposed h d ...
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... Test Conditions 125 ° 125 ° ° SiA814DJ Vishay Siliconix Min. Typ. Max. 4.5 15 0.8 1 ° Min. Typ. Max. 0.37 0.45 0.31 0.37 0.46 0.56 0.41 0.50 0.025 0.1 0.6 6.00 35 www.vishay.com ...
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... SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS thru 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.155 0.130 0.105 0.080 V GS 0.055 V GS 0.030 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 4 ...
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... A BVDSS Single Pulse Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient SiA814DJ Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0 0 ...
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... SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... New Product = 25 °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -3 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA814DJ Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... SiA814DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T 100 Junction Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 New Product = 25 °C, unless otherwise noted 0.1 75 100 125 150 250 200 150 100 ...
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... S-81176-Rev. A, 26-May-08 New Product = 25 °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA814DJ Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...