NDS8426 Fairchild Semiconductor, NDS8426 Datasheet

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NDS8426

Manufacturer Part Number
NDS8426
Description
Single N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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____________________________________________________________________________________________
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
ABSOLUTE MAXIMUM RATINGS
© 1997 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
NDS8426
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1)
(Note 1c)
Features
9.9 A, 20 V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
5
6
7
8
R
DS(ON)
DS(ON)
NDS8426
-55 to 150
= 0.015
= 0.020
9.9
2.5
1.2
20
20
50
25
8
1
@ V
@ V
GS
GS
= 4.5 V.
= 2.7 V.
3
2
1
4
September 1997
DS(ON)
.
NDS8426 Rev.E
Units
°C/W
°C/W
W
°C
V
V
A

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NDS8426 Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package. = 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) September 1997 = 0.015 @ V = 4.5 V. DS(ON 0.020 @ V = 2.7 V. DS(ON) GS DS(ON NDS8426 20 8 9.9 20 2.5 1.2 1 -55 to 150 Units °C °C/W °C/W NDS8426 Rev.E ...

Page 2

... Typ Max 55° 100 -100 0.4 0 125°C 0.3 0.34 0.8 J 0.013 0.015 0.017 0.027 T = 125°C J 0.016 0. 1765 940 360 120 220 58 100 NDS8426 Rev.E Units V µA µ ...

Page 3

... C/W when mounted on a 0.006 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. = 25°C unless otherwise noted) A Conditions 2.1 A (Note Min Typ Max Units 2.1 0.65 1.2 is guaranteed NDS8426 Rev ...

Page 4

... DRAIN CURRENT (A) , DRAIN CURRENT ( Figure 2. On-Resistance Variation = 4. 125°C J 25°C -55° DRAIN CURRENT (A) D Figure 4. On-Resistance Variation 250µ 100 125 T , JUNCTION TEMPERATURE (° with Temperature 150 NDS8426 Rev.E ...

Page 5

... T = 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD with Source Current and . Temperature 15V GATE CHARGE (nC off t t d(off PULSE WIDTH . 1.2 10V INVERTED NDS8426 Rev.E ...

Page 6

... COPPER MOUNTING PAD AREA ( 4.5V GS SINGLE PULSE R = See Note 25° 0.2 0 DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDS8426 Rev.E ...

Page 7

SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds) Packaging Configuration: Figure 1 SHI P OR STO RE N EAR ECT ROST ECT RO M AGN ETI ...

Page 8

... SOIC(8lds) Reel Configuration: Figure 4.0 Dim A max 13" Diameter Option Reel Tape Size Dim A Dim B Option 7.00 0.059 12mm 7" Dia 177.8 1.5 13.00 0.059 12mm 13" Dia 330 1.5 1998 Fairchild Semiconductor Corporation User Direction of Feed Dimensions are in millimeter 1.55 1.60 1.75 10.25 5.50 8.0 +/-0.05 +/-0 ...

Page 9

SO-8 Tape and Reel Data and Package Dimensions, continued SOIC-8 (FS PKG Code S1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 September 1998, Rev. ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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