EM6K1 ROHM Co. Ltd., EM6K1 Datasheet

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EM6K1

Manufacturer Part Number
EM6K1
Description
2.5v Drive Nch+nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistor
2.5V Drive Nch+Nch MOS FET
EM6K1
Silicon N-channel MOS FET
1) Two 2SK3019 transistors in a single EMT package.
2) The MOS FET elements are independent, eliminating
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device ideal for
Interfacing, switching (30V, 100mA)
<It is the same ratings for Tr1 and Tr2.>
∗ 1 Pw≤10µs, Duty cycle≤1%
∗ 2 With each pin mounted on the recommended lands.
Drain−source voltage
Gate−source voltage
Drain current
Channel temperature
Storage temperature
Total power dissipation
Type
EM6K1
Structure
Features
Packaging specifications
Applications
Absolute maximum ratings (Ta=25°C)
mutual interference.
portable equipment.
Parameter
Package
Code
Basic ordering unit
(pieces)
Continuous
Pulsed
Symbol
Taping
V
V
Tstg
Tch
8000
I
T2R
P
DSS
GSS
I
DP
D
D
∗ 1
∗ 2
−55 to +150
Limits
±100
±400
±20
150
150
120
30
mW / ELEMENT
mW / TOTAL
∗ A protection diode has been built in between the gate and
External dimensions (Unit : mm)
Equivalent circuit
EMT6
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Unit
mA
mA
°C
°C
V
V
(6)
(1)
Gate
Protection
Diode
1pin mark
Tr1
Abbreviated symbol : K1
( 1 ) ( 2 )
(5)
(2)
0.5
( 6 )
0.22
1.6
1.0
0.5
( 5 )
( 3 )
Gate
Protection
Diode
( 4 )
Tr2
Each lead has same dimensions
0.13
(4)
(3)
0.5
Rev.C
(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(5)Tr2 Gate
(6)Tr1 Drain
EM6K1
1/3

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EM6K1 Summary of contents

Page 1

... V V GSS ±100 ∗ 1 ±400 150 mW / TOTAL ∗ 120 mW / ELEMENT °C Tch 150 −55 to +150 °C Tstg EM6K1 1.6 0.5 1.0 0.5 0 1pin mark ( 0.22 0.13 Each lead has same dimensions Abbreviated symbol : K1 Gate (5) (4) Protection Diode ∗ Tr1 Tr2 (1)Tr1 Source (2)Tr1 Gate ∗ ...

Page 2

... Pulsed Ta=125 °C 75 ° °C −25 ° 0.5 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 DRAIN CURRENT : I (A) D Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) EM6K1 Conditions = ±20V 10µ 30V 3V 100µ ...

Page 3

... DRAIN-SOURCE VOLTAGE : V DS Fig.11 Typical Capacitance vs. Drain-Source Voltage Pulse Width 50 10 d(on Fig.14 Switching Time Waveforms EM6K1 200m V =3V DS Pulsed 100m 50m 20m Ta=125 °C 10m 5m −25 ° 0.5m 0.2m 0.1m 0.5 0 0.5 1 SOURCE-DRAIN VOLTAGE : V Fig.9 Reverse Drain Current vs. ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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